GR-FET application for high-frequency detection device

A small forbidden gap matched to low-energy photons (meV) and a quasi-Dirac electron system are both definitive characteristics of bilayer graphene (GR) that has gained it considerable interest in realizing a broadly tunable sensor for application in the microwave region around gigahertz (GHz) and t...

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Detalles Bibliográficos
Autores principales: Mahjoub, Akram M, Nicol, Alec, Abe, Takuto, Ouchi, Takahiro, Iso, Yuhei, Kida, Michio, Aoki, Noboyuki, Miyamoto, Katsuhiko, Omatsu, Takashige, Bird, Jonathan P, Ferry, David K, Ishibashi, Koji, Ochiai, Yuichi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2013
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3570464/
https://www.ncbi.nlm.nih.gov/pubmed/23305264
http://dx.doi.org/10.1186/1556-276X-8-22
Descripción
Sumario:A small forbidden gap matched to low-energy photons (meV) and a quasi-Dirac electron system are both definitive characteristics of bilayer graphene (GR) that has gained it considerable interest in realizing a broadly tunable sensor for application in the microwave region around gigahertz (GHz) and terahertz (THz) regimes. In this work, a systematic study is presented which explores the GHz/THz detection limit of both bilayer and single-layer graphene field-effect transistor (GR-FET) devices. Several major improvements to the wiring setup, insulation architecture, graphite source, and bolometric heating of the GR-FET sensor were made in order to extend microwave photoresponse past previous reports of 40 GHz and to further improve THz detection.

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