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Improved Response of ZnO Films for Pyroelectric Devices

Increasing the temperature variation rate is a useful method for enhancing the response of pyroelectric devices. A three-dimensional ZnO film was fabricated by the aerosol deposition (AD) rapid process using the shadow mask method, which induces lateral temperature gradients on the sidewalls of the...

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Detalles Bibliográficos
Autores principales: Hsiao, Chun-Ching, Yu, Shih-Yuan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Molecular Diversity Preservation International (MDPI) 2012
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3571823/
https://www.ncbi.nlm.nih.gov/pubmed/23235444
http://dx.doi.org/10.3390/s121217007
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author Hsiao, Chun-Ching
Yu, Shih-Yuan
author_facet Hsiao, Chun-Ching
Yu, Shih-Yuan
author_sort Hsiao, Chun-Ching
collection PubMed
description Increasing the temperature variation rate is a useful method for enhancing the response of pyroelectric devices. A three-dimensional ZnO film was fabricated by the aerosol deposition (AD) rapid process using the shadow mask method, which induces lateral temperature gradients on the sidewalls of the responsive element, thereby increasing the temperature variation rate. To enhance the quality of the film and reduce the concentration of defects, the film was further treated by laser annealing, and the integration of a comb-like top electrode enhanced the voltage response and reduced the response time of the resulting ZnO pyroelectric devices.
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spelling pubmed-35718232013-02-19 Improved Response of ZnO Films for Pyroelectric Devices Hsiao, Chun-Ching Yu, Shih-Yuan Sensors (Basel) Article Increasing the temperature variation rate is a useful method for enhancing the response of pyroelectric devices. A three-dimensional ZnO film was fabricated by the aerosol deposition (AD) rapid process using the shadow mask method, which induces lateral temperature gradients on the sidewalls of the responsive element, thereby increasing the temperature variation rate. To enhance the quality of the film and reduce the concentration of defects, the film was further treated by laser annealing, and the integration of a comb-like top electrode enhanced the voltage response and reduced the response time of the resulting ZnO pyroelectric devices. Molecular Diversity Preservation International (MDPI) 2012-12-12 /pmc/articles/PMC3571823/ /pubmed/23235444 http://dx.doi.org/10.3390/s121217007 Text en © 2012 by the authors; licensee MDPI, Basel, Switzerland This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution license (http://creativecommons.org/licenses/by/3.0/).
spellingShingle Article
Hsiao, Chun-Ching
Yu, Shih-Yuan
Improved Response of ZnO Films for Pyroelectric Devices
title Improved Response of ZnO Films for Pyroelectric Devices
title_full Improved Response of ZnO Films for Pyroelectric Devices
title_fullStr Improved Response of ZnO Films for Pyroelectric Devices
title_full_unstemmed Improved Response of ZnO Films for Pyroelectric Devices
title_short Improved Response of ZnO Films for Pyroelectric Devices
title_sort improved response of zno films for pyroelectric devices
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3571823/
https://www.ncbi.nlm.nih.gov/pubmed/23235444
http://dx.doi.org/10.3390/s121217007
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