Observation of an Intermediate Band in Sn-doped Chalcopyrites with Wide-spectrum Solar Response

Nanostrcutured particles and polycrystalline thin films of Sn-doped chalcopyrite are synthesized by newly-developed methods. Surprisingly, Sn doping introduces a narrow partially filled intermediate band (IB) located ~1.7 eV (CuGaS(2)) and ~0.8 eV (CuInS(2)) above the valance band maximum in the for...

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Detalles Bibliográficos
Autores principales: Yang, Chongyin, Qin, Mingsheng, Wang, Yaoming, Wan, Dongyun, Huang, Fuqiang, Lin, Jianhua
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2013
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3573333/
https://www.ncbi.nlm.nih.gov/pubmed/23412565
http://dx.doi.org/10.1038/srep01286
Descripción
Sumario:Nanostrcutured particles and polycrystalline thin films of Sn-doped chalcopyrite are synthesized by newly-developed methods. Surprisingly, Sn doping introduces a narrow partially filled intermediate band (IB) located ~1.7 eV (CuGaS(2)) and ~0.8 eV (CuInS(2)) above the valance band maximum in the forbidden band gap. Diffuse reflection spectra and photoluminescence spectra reveal extra absorption and emission spectra induced by the IBs, which are further supported by first-principle calculations. Wide spectrum solar response greatly enhances photocatalysis, photovoltaics, and photo-induced hydrogen production due to the intermediate band.

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