Observation of an Intermediate Band in Sn-doped Chalcopyrites with Wide-spectrum Solar Response

Nanostrcutured particles and polycrystalline thin films of Sn-doped chalcopyrite are synthesized by newly-developed methods. Surprisingly, Sn doping introduces a narrow partially filled intermediate band (IB) located ~1.7 eV (CuGaS(2)) and ~0.8 eV (CuInS(2)) above the valance band maximum in the for...

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Autores principales: Yang, Chongyin, Qin, Mingsheng, Wang, Yaoming, Wan, Dongyun, Huang, Fuqiang, Lin, Jianhua
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2013
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3573333/
https://www.ncbi.nlm.nih.gov/pubmed/23412565
http://dx.doi.org/10.1038/srep01286
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author Yang, Chongyin
Qin, Mingsheng
Wang, Yaoming
Wan, Dongyun
Huang, Fuqiang
Lin, Jianhua
author_facet Yang, Chongyin
Qin, Mingsheng
Wang, Yaoming
Wan, Dongyun
Huang, Fuqiang
Lin, Jianhua
author_sort Yang, Chongyin
collection PubMed
description Nanostrcutured particles and polycrystalline thin films of Sn-doped chalcopyrite are synthesized by newly-developed methods. Surprisingly, Sn doping introduces a narrow partially filled intermediate band (IB) located ~1.7 eV (CuGaS(2)) and ~0.8 eV (CuInS(2)) above the valance band maximum in the forbidden band gap. Diffuse reflection spectra and photoluminescence spectra reveal extra absorption and emission spectra induced by the IBs, which are further supported by first-principle calculations. Wide spectrum solar response greatly enhances photocatalysis, photovoltaics, and photo-induced hydrogen production due to the intermediate band.
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spelling pubmed-35733332013-02-15 Observation of an Intermediate Band in Sn-doped Chalcopyrites with Wide-spectrum Solar Response Yang, Chongyin Qin, Mingsheng Wang, Yaoming Wan, Dongyun Huang, Fuqiang Lin, Jianhua Sci Rep Article Nanostrcutured particles and polycrystalline thin films of Sn-doped chalcopyrite are synthesized by newly-developed methods. Surprisingly, Sn doping introduces a narrow partially filled intermediate band (IB) located ~1.7 eV (CuGaS(2)) and ~0.8 eV (CuInS(2)) above the valance band maximum in the forbidden band gap. Diffuse reflection spectra and photoluminescence spectra reveal extra absorption and emission spectra induced by the IBs, which are further supported by first-principle calculations. Wide spectrum solar response greatly enhances photocatalysis, photovoltaics, and photo-induced hydrogen production due to the intermediate band. Nature Publishing Group 2013-02-15 /pmc/articles/PMC3573333/ /pubmed/23412565 http://dx.doi.org/10.1038/srep01286 Text en Copyright © 2013, Macmillan Publishers Limited. All rights reserved http://creativecommons.org/licenses/by-nc-nd/3.0/ This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivs 3.0 Unported License. To view a copy of this license, visit http://creativecommons.org/licenses/by-nc-nd/3.0/
spellingShingle Article
Yang, Chongyin
Qin, Mingsheng
Wang, Yaoming
Wan, Dongyun
Huang, Fuqiang
Lin, Jianhua
Observation of an Intermediate Band in Sn-doped Chalcopyrites with Wide-spectrum Solar Response
title Observation of an Intermediate Band in Sn-doped Chalcopyrites with Wide-spectrum Solar Response
title_full Observation of an Intermediate Band in Sn-doped Chalcopyrites with Wide-spectrum Solar Response
title_fullStr Observation of an Intermediate Band in Sn-doped Chalcopyrites with Wide-spectrum Solar Response
title_full_unstemmed Observation of an Intermediate Band in Sn-doped Chalcopyrites with Wide-spectrum Solar Response
title_short Observation of an Intermediate Band in Sn-doped Chalcopyrites with Wide-spectrum Solar Response
title_sort observation of an intermediate band in sn-doped chalcopyrites with wide-spectrum solar response
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3573333/
https://www.ncbi.nlm.nih.gov/pubmed/23412565
http://dx.doi.org/10.1038/srep01286
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