Cargando…
Observation of an Intermediate Band in Sn-doped Chalcopyrites with Wide-spectrum Solar Response
Nanostrcutured particles and polycrystalline thin films of Sn-doped chalcopyrite are synthesized by newly-developed methods. Surprisingly, Sn doping introduces a narrow partially filled intermediate band (IB) located ~1.7 eV (CuGaS(2)) and ~0.8 eV (CuInS(2)) above the valance band maximum in the for...
Autores principales: | Yang, Chongyin, Qin, Mingsheng, Wang, Yaoming, Wan, Dongyun, Huang, Fuqiang, Lin, Jianhua |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2013
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3573333/ https://www.ncbi.nlm.nih.gov/pubmed/23412565 http://dx.doi.org/10.1038/srep01286 |
Ejemplares similares
-
Wide-Gap Chalcopyrites
por: Siebentritt, Susanne, et al.
Publicado: (2006) -
Printable, wide band-gap chalcopyrite thin films for power generating window applications
por: Moon, Sung Hwan, et al.
Publicado: (2014) -
Local Bonding Influence on the Band Edge and Band Gap Formation in Quaternary Chalcopyrites
por: Miglio, Anna, et al.
Publicado: (2017) -
GaN intermediate band solar cells with Mn-doped absorption layer
por: Lee, Ming-Lun, et al.
Publicado: (2018) -
Ternary chalcopyrite semiconductors
por: Shay, J L, et al.
Publicado: (2013)