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Dot size effects of nanocrystalline germanium on charging dynamics of memory devices
The dot size of nanocrystalline germanium (NC Ge) which impacts on the charging dynamics of memory devices has been theoretically investigated. The calculations demonstrate that the charge stored in the NC Ge layer and the charging current at a given oxide voltage depend on the dot size especially o...
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Springer
2013
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3576263/ https://www.ncbi.nlm.nih.gov/pubmed/23305228 http://dx.doi.org/10.1186/1556-276X-8-21 |