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Molecular mechanism of voltage sensing in voltage-gated proton channels

Voltage-gated proton (Hv) channels play an essential role in phagocytic cells by generating a hyperpolarizing proton current that electrically compensates for the depolarizing current generated by the NADPH oxidase during the respiratory burst, thereby ensuring a sustained production of reactive oxy...

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Detalles Bibliográficos
Autores principales: Gonzalez, Carlos, Rebolledo, Santiago, Perez, Marta E., Larsson, H. Peter
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Rockefeller University Press 2013
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3581690/
https://www.ncbi.nlm.nih.gov/pubmed/23401575
http://dx.doi.org/10.1085/jgp.201210857
_version_ 1782260504600772608
author Gonzalez, Carlos
Rebolledo, Santiago
Perez, Marta E.
Larsson, H. Peter
author_facet Gonzalez, Carlos
Rebolledo, Santiago
Perez, Marta E.
Larsson, H. Peter
author_sort Gonzalez, Carlos
collection PubMed
description Voltage-gated proton (Hv) channels play an essential role in phagocytic cells by generating a hyperpolarizing proton current that electrically compensates for the depolarizing current generated by the NADPH oxidase during the respiratory burst, thereby ensuring a sustained production of reactive oxygen species by the NADPH oxidase in phagocytes to neutralize engulfed bacteria. Despite the importance of the voltage-dependent Hv current, it is at present unclear which residues in Hv channels are responsible for the voltage activation. Here we show that individual neutralizations of three charged residues in the fourth transmembrane domain, S4, all reduce the voltage dependence of activation. In addition, we show that the middle S4 charged residue moves from a position accessible from the cytosolic solution to a position accessible from the extracellular solution, suggesting that this residue moves across most of the membrane electric field during voltage activation of Hv channels. Our results show for the first time that the charge movement of these three S4 charges accounts for almost all of the measured gating charge in Hv channels.
format Online
Article
Text
id pubmed-3581690
institution National Center for Biotechnology Information
language English
publishDate 2013
publisher The Rockefeller University Press
record_format MEDLINE/PubMed
spelling pubmed-35816902013-09-01 Molecular mechanism of voltage sensing in voltage-gated proton channels Gonzalez, Carlos Rebolledo, Santiago Perez, Marta E. Larsson, H. Peter J Gen Physiol Research Article Voltage-gated proton (Hv) channels play an essential role in phagocytic cells by generating a hyperpolarizing proton current that electrically compensates for the depolarizing current generated by the NADPH oxidase during the respiratory burst, thereby ensuring a sustained production of reactive oxygen species by the NADPH oxidase in phagocytes to neutralize engulfed bacteria. Despite the importance of the voltage-dependent Hv current, it is at present unclear which residues in Hv channels are responsible for the voltage activation. Here we show that individual neutralizations of three charged residues in the fourth transmembrane domain, S4, all reduce the voltage dependence of activation. In addition, we show that the middle S4 charged residue moves from a position accessible from the cytosolic solution to a position accessible from the extracellular solution, suggesting that this residue moves across most of the membrane electric field during voltage activation of Hv channels. Our results show for the first time that the charge movement of these three S4 charges accounts for almost all of the measured gating charge in Hv channels. The Rockefeller University Press 2013-03 /pmc/articles/PMC3581690/ /pubmed/23401575 http://dx.doi.org/10.1085/jgp.201210857 Text en © 2013 Gonzalez et al. This article is distributed under the terms of an Attribution–Noncommercial–Share Alike–No Mirror Sites license for the first six months after the publication date (see http://www.rupress.org/terms). After six months it is available under a Creative Commons License (Attribution–Noncommercial–Share Alike 3.0 Unported license, as described at http://creativecommons.org/licenses/by-nc-sa/3.0/).
spellingShingle Research Article
Gonzalez, Carlos
Rebolledo, Santiago
Perez, Marta E.
Larsson, H. Peter
Molecular mechanism of voltage sensing in voltage-gated proton channels
title Molecular mechanism of voltage sensing in voltage-gated proton channels
title_full Molecular mechanism of voltage sensing in voltage-gated proton channels
title_fullStr Molecular mechanism of voltage sensing in voltage-gated proton channels
title_full_unstemmed Molecular mechanism of voltage sensing in voltage-gated proton channels
title_short Molecular mechanism of voltage sensing in voltage-gated proton channels
title_sort molecular mechanism of voltage sensing in voltage-gated proton channels
topic Research Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3581690/
https://www.ncbi.nlm.nih.gov/pubmed/23401575
http://dx.doi.org/10.1085/jgp.201210857
work_keys_str_mv AT gonzalezcarlos molecularmechanismofvoltagesensinginvoltagegatedprotonchannels
AT rebolledosantiago molecularmechanismofvoltagesensinginvoltagegatedprotonchannels
AT perezmartae molecularmechanismofvoltagesensinginvoltagegatedprotonchannels
AT larssonhpeter molecularmechanismofvoltagesensinginvoltagegatedprotonchannels