Electrochemical doping for lowering contact barriers in organic field effect transistors

By electrochemically p-doping pentacene in the vicinity of the source-drain electrodes in organic field effect transistors the injection barrier for holes is decreased. The focus of this work is put on the influence of the p-doping process on the transistor performance. Cyclic voltammetry performed...

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Detalles Bibliográficos
Autores principales: Schaur, Stefan, Stadler, Philipp, Meana-Esteban, Beatriz, Neugebauer, Helmut, Serdar Sariciftci, N.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Elsevier Science 2012
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3587386/
https://www.ncbi.nlm.nih.gov/pubmed/23483101
http://dx.doi.org/10.1016/j.orgel.2012.03.020

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3587386/
https://www.ncbi.nlm.nih.gov/pubmed/23483101
http://dx.doi.org/10.1016/j.orgel.2012.03.020

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