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Blue light emission from the heterostructured ZnO/InGaN/GaN

ZnO/InGaN/GaN heterostructured light-emitting diodes (LEDs) were fabricated by molecular beam epitaxy and atomic layer deposition. InGaN films consisted of an Mg-doped InGaN layer, an undoped InGaN layer, and a Si-doped InGaN layer. Current-voltage characteristic of the heterojunction indicated a di...

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Detalles Bibliográficos
Autores principales:	Wang, Ti, Wu, Hao, Wang, Zheng, Chen, Chao, Liu, Chang
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Springer 2013
Materias:	Nano Express
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3599291/ https://www.ncbi.nlm.nih.gov/pubmed/23433236 http://dx.doi.org/10.1186/1556-276X-8-99

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