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Overshoot mechanism in transient excitation of THz and Gunn oscillations in wide-bandgap semiconductors
A detailed study of high-field transient and direct-current (DC) transport in GaN-based Gunn diode oscillators is carried out using the commercial simulator Sentaurus Device. Applicability of drift-diffusion (DD) and hydrodynamic (HD) models to high-speed, high-frequency devices is discussed in dept...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2012
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3602179/ https://www.ncbi.nlm.nih.gov/pubmed/23176644 http://dx.doi.org/10.1186/1556-276X-7-647 |