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Overshoot mechanism in transient excitation of THz and Gunn oscillations in wide-bandgap semiconductors

A detailed study of high-field transient and direct-current (DC) transport in GaN-based Gunn diode oscillators is carried out using the commercial simulator Sentaurus Device. Applicability of drift-diffusion (DD) and hydrodynamic (HD) models to high-speed, high-frequency devices is discussed in dept...

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Detalles Bibliográficos
Autores principales:	Momox, Ernesto, Zakhleniuk, Nick, Balkan, Naci
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Springer 2012
Materias:	Nano Express
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3602179/ https://www.ncbi.nlm.nih.gov/pubmed/23176644 http://dx.doi.org/10.1186/1556-276X-7-647

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