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Ab initio calculation of valley splitting in monolayer δ-doped phosphorus in silicon

The differences in energy between electronic bands due to valley splitting are of paramount importance in interpreting transport spectroscopy experiments on state-of-the-art quantum devices defined by scanning tunnelling microscope lithography. Using vasp, we develop a plane-wave density functional...

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Detalles Bibliográficos
Autores principales: Drumm, Daniel W, Budi, Akin, Per, Manolo C, Russo, Salvy P, L Hollenberg, Lloyd C
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2013
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3606473/
https://www.ncbi.nlm.nih.gov/pubmed/23445785
http://dx.doi.org/10.1186/1556-276X-8-111

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