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Ab initio calculation of valley splitting in monolayer δ-doped phosphorus in silicon
The differences in energy between electronic bands due to valley splitting are of paramount importance in interpreting transport spectroscopy experiments on state-of-the-art quantum devices defined by scanning tunnelling microscope lithography. Using vasp, we develop a plane-wave density functional...
Autores principales: | Drumm, Daniel W, Budi, Akin, Per, Manolo C, Russo, Salvy P, L Hollenberg, Lloyd C |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer
2013
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3606473/ https://www.ncbi.nlm.nih.gov/pubmed/23445785 http://dx.doi.org/10.1186/1556-276X-8-111 |
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