Cargando…
Electronic structure modulation for low-power switching
We report the transport characteristics of a novel transistor based on the electronic structure modulation of the channel. The gate voltage-controlled current modulation arises from the bandwidth manipulation of a midgap or a near-midgap state. We show that the transistor exhibits a gain and overcom...
| Autor principal: | |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2013
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3606601/ https://www.ncbi.nlm.nih.gov/pubmed/23406380 http://dx.doi.org/10.1186/1556-276X-8-74 |