Modulation in current density of metal/n-SiC contact by inserting Al(2)O(3) interfacial layer

Metal contact to SiC is not easy to modulate since the contact can be influenced by the metal, the termination of the SiC, the doping, and the fabrication process. In this work, we introduce a method by inserting a thin Al(2)O(3) layer between metal and SiC to solve this problem simply but effectively. The Al(2)O(3)/n-SiC interface composition was obtained with X-ray photoemission spectroscopy, and the electrical properties of subsequently deposited metal contacts were characterized by current–voltage method. We can clearly demonstrate that the insertion of Al(2)O(3) interfacial layer can modulate the current density effectively and realize the transfer between the Schottky contact and ohmic contact.