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Modulation in current density of metal/n-SiC contact by inserting Al(2)O(3) interfacial layer

Metal contact to SiC is not easy to modulate since the contact can be influenced by the metal, the termination of the SiC, the doping, and the fabrication process. In this work, we introduce a method by inserting a thin Al(2)O(3) layer between metal and SiC to solve this problem simply but effective...

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Detalles Bibliográficos
Autores principales:	Zheng, Shan, Sun, Qing-Qing, Yang, Wen, Zhou, Peng, Lu, Hong-Liang, Zhang, David Wei
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Springer 2013
Materias:	Nano Express
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3614437/ https://www.ncbi.nlm.nih.gov/pubmed/23452618 http://dx.doi.org/10.1186/1556-276X-8-116

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