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A look underneath the SiO(2)/4H-SiC interface after N(2)O thermal treatments
The electrical compensation effect of the nitrogen incorporation at the SiO(2)/4H-SiC (p-type) interface after thermal treatments in ambient N(2)O is investigated employing both scanning spreading resistance microscopy (SSRM) and scanning capacitance microscopy (SCM). SSRM measurements on p-type 4H-...
Autores principales: | Fiorenza, Patrick, Giannazzo, Filippo, Swanson, Lukas K, Frazzetto, Alessia, Lorenti, Simona, Alessandrino, Mario S, Roccaforte, Fabrizio |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Beilstein-Institut
2013
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3628548/ https://www.ncbi.nlm.nih.gov/pubmed/23616945 http://dx.doi.org/10.3762/bjnano.4.26 |
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