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Enhanced and continuous electrostatic carrier doping on the SrTiO(3) surface

Paraelectrical tuning of a charge carrier density as high as 10(13) cm(−2) in the presence of a high electronic carrier mobility on the delicate surfaces of correlated oxides, is a key to the technological breakthrough of a field effect transistor (FET) utilising the metal-nonmetal transition. Here...

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Detalles Bibliográficos
Autores principales:	Eyvazov, A. B., Inoue, I. H., Stoliar, P., Rozenberg, M. J., Panagopoulos, C.
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group 2013
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3634102/ http://dx.doi.org/10.1038/srep01721

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