Cargando…
Topological Insulator Bi(2)Se(3) Nanowire High Performance Field-Effect Transistors
Topological insulators are unique electronic materials with insulating interiors and robust metallic surfaces. Device applications exploiting their remarkable properties have so far been hampered by the difficulty to electrically tune the Fermi levels of both bulk and thin film samples. Here we show...
Autores principales: | Zhu, Hao, Richter, Curt A., Zhao, Erhai, Bonevich, John E., Kimes, William A., Jang, Hyuk-Jae, Yuan, Hui, Li, Haitao, Arab, Abbas, Kirillov, Oleg, Maslar, James E., Ioannou, Dimitris E., Li, Qiliang |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2013
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3639452/ http://dx.doi.org/10.1038/srep01757 |
Ejemplares similares
-
Thermoelectric Characteristics of A Single-Crystalline Topological Insulator Bi(2)Se(3) Nanowire
por: Dedi,, et al.
Publicado: (2021) -
An Efficient Dopant for Introducing Magnetism into Topological Insulator Bi(2)Se(3)
por: Wang, Dan, et al.
Publicado: (2022) -
Quantum frequency doubling in the topological insulator Bi(2)Se(3)
por: He, Pan, et al.
Publicado: (2021) -
Influence of Doping on the Topological Surface States of Crystalline Bi(2)Se(3) Topological Insulators
por: Nowak, Kamil, et al.
Publicado: (2022) -
Magnetotransport Studies of Encapsulated Topological Insulator Bi(2)Se(3) Nanoribbons
por: Kunakova, Gunta, et al.
Publicado: (2022)