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Atomic-level simulation of current–voltage relationships in single-file ion channels

The difficulty in characterizing ion conduction through membrane channels at the level of individual permeation events has made it challenging to elucidate the mechanistic principles underpinning this fundamental physiological process. Using long, all-atom simulations enabled by special-purpose hard...

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Autores principales: Jensen, Morten Ø., Jogini, Vishwanath, Eastwood, Michael P., Shaw, David E.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Rockefeller University Press 2013
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3639580/
https://www.ncbi.nlm.nih.gov/pubmed/23589581
http://dx.doi.org/10.1085/jgp.201210820
_version_ 1782475964138127360
author Jensen, Morten Ø.
Jogini, Vishwanath
Eastwood, Michael P.
Shaw, David E.
author_facet Jensen, Morten Ø.
Jogini, Vishwanath
Eastwood, Michael P.
Shaw, David E.
author_sort Jensen, Morten Ø.
collection PubMed
description The difficulty in characterizing ion conduction through membrane channels at the level of individual permeation events has made it challenging to elucidate the mechanistic principles underpinning this fundamental physiological process. Using long, all-atom simulations enabled by special-purpose hardware, we studied K(+) permeation across the K(V)1.2/2.1 voltage-gated potassium channel. At experimentally accessible voltages, which include the physiological range, the simulated permeation rate was substantially lower than the experimentally observed rate. The current–voltage relationship was also nonlinear but became linear at much higher voltages. We observed permeation consistent with a “knock-on” mechanism at all voltages. At high voltages, the permeation rate was in accordance with our previously reported K(V)1.2 pore-only simulations, after the simulated voltages from the previous study were recalculated using the correct method, new insight into which is provided here. Including the voltage-sensing domains in the simulated channel brought the linear current–voltage regime closer to the experimentally accessible voltages. The simulated permeation rate, however, still underestimated the experimental rate, because formation of the knock-on intermediate occurred too infrequently. Reducing the interaction strength between the ion and the selectivity filter did not increase conductance. In complementary simulations of gramicidin A, similar changes in interaction strength did increase the observed permeation rate. Permeation nevertheless remained substantially below the experimental value, largely because of infrequent ion recruitment into the pore lumen. Despite the need to apply large voltages to simulate the permeation process, the apparent voltage insensitivity of the permeation mechanism suggests that the direct simulation of permeation at the single-ion level can provide fundamental physiological insight into ion channel function. Notably, our simulations suggest that the knock-on permeation mechanisms in K(V)1.2 and KcsA may be different.
format Online
Article
Text
id pubmed-3639580
institution National Center for Biotechnology Information
language English
publishDate 2013
publisher The Rockefeller University Press
record_format MEDLINE/PubMed
spelling pubmed-36395802013-11-01 Atomic-level simulation of current–voltage relationships in single-file ion channels Jensen, Morten Ø. Jogini, Vishwanath Eastwood, Michael P. Shaw, David E. J Gen Physiol Research Article The difficulty in characterizing ion conduction through membrane channels at the level of individual permeation events has made it challenging to elucidate the mechanistic principles underpinning this fundamental physiological process. Using long, all-atom simulations enabled by special-purpose hardware, we studied K(+) permeation across the K(V)1.2/2.1 voltage-gated potassium channel. At experimentally accessible voltages, which include the physiological range, the simulated permeation rate was substantially lower than the experimentally observed rate. The current–voltage relationship was also nonlinear but became linear at much higher voltages. We observed permeation consistent with a “knock-on” mechanism at all voltages. At high voltages, the permeation rate was in accordance with our previously reported K(V)1.2 pore-only simulations, after the simulated voltages from the previous study were recalculated using the correct method, new insight into which is provided here. Including the voltage-sensing domains in the simulated channel brought the linear current–voltage regime closer to the experimentally accessible voltages. The simulated permeation rate, however, still underestimated the experimental rate, because formation of the knock-on intermediate occurred too infrequently. Reducing the interaction strength between the ion and the selectivity filter did not increase conductance. In complementary simulations of gramicidin A, similar changes in interaction strength did increase the observed permeation rate. Permeation nevertheless remained substantially below the experimental value, largely because of infrequent ion recruitment into the pore lumen. Despite the need to apply large voltages to simulate the permeation process, the apparent voltage insensitivity of the permeation mechanism suggests that the direct simulation of permeation at the single-ion level can provide fundamental physiological insight into ion channel function. Notably, our simulations suggest that the knock-on permeation mechanisms in K(V)1.2 and KcsA may be different. The Rockefeller University Press 2013-05 /pmc/articles/PMC3639580/ /pubmed/23589581 http://dx.doi.org/10.1085/jgp.201210820 Text en © 2013 Jensen et al. This article is distributed under the terms of an Attribution–Noncommercial–Share Alike–No Mirror Sites license for the first six months after the publication date (see http://www.rupress.org/terms). After six months it is available under a Creative Commons License (Attribution–Noncommercial–Share Alike 3.0 Unported license, as described at http://creativecommons.org/licenses/by-nc-sa/3.0/).
spellingShingle Research Article
Jensen, Morten Ø.
Jogini, Vishwanath
Eastwood, Michael P.
Shaw, David E.
Atomic-level simulation of current–voltage relationships in single-file ion channels
title Atomic-level simulation of current–voltage relationships in single-file ion channels
title_full Atomic-level simulation of current–voltage relationships in single-file ion channels
title_fullStr Atomic-level simulation of current–voltage relationships in single-file ion channels
title_full_unstemmed Atomic-level simulation of current–voltage relationships in single-file ion channels
title_short Atomic-level simulation of current–voltage relationships in single-file ion channels
title_sort atomic-level simulation of current–voltage relationships in single-file ion channels
topic Research Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3639580/
https://www.ncbi.nlm.nih.gov/pubmed/23589581
http://dx.doi.org/10.1085/jgp.201210820
work_keys_str_mv AT jensenmortenø atomiclevelsimulationofcurrentvoltagerelationshipsinsinglefileionchannels
AT joginivishwanath atomiclevelsimulationofcurrentvoltagerelationshipsinsinglefileionchannels
AT eastwoodmichaelp atomiclevelsimulationofcurrentvoltagerelationshipsinsinglefileionchannels
AT shawdavide atomiclevelsimulationofcurrentvoltagerelationshipsinsinglefileionchannels