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Atomic-level simulation of current–voltage relationships in single-file ion channels
The difficulty in characterizing ion conduction through membrane channels at the level of individual permeation events has made it challenging to elucidate the mechanistic principles underpinning this fundamental physiological process. Using long, all-atom simulations enabled by special-purpose hard...
Autores principales: | , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
The Rockefeller University Press
2013
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3639580/ https://www.ncbi.nlm.nih.gov/pubmed/23589581 http://dx.doi.org/10.1085/jgp.201210820 |
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author | Jensen, Morten Ø. Jogini, Vishwanath Eastwood, Michael P. Shaw, David E. |
author_facet | Jensen, Morten Ø. Jogini, Vishwanath Eastwood, Michael P. Shaw, David E. |
author_sort | Jensen, Morten Ø. |
collection | PubMed |
description | The difficulty in characterizing ion conduction through membrane channels at the level of individual permeation events has made it challenging to elucidate the mechanistic principles underpinning this fundamental physiological process. Using long, all-atom simulations enabled by special-purpose hardware, we studied K(+) permeation across the K(V)1.2/2.1 voltage-gated potassium channel. At experimentally accessible voltages, which include the physiological range, the simulated permeation rate was substantially lower than the experimentally observed rate. The current–voltage relationship was also nonlinear but became linear at much higher voltages. We observed permeation consistent with a “knock-on” mechanism at all voltages. At high voltages, the permeation rate was in accordance with our previously reported K(V)1.2 pore-only simulations, after the simulated voltages from the previous study were recalculated using the correct method, new insight into which is provided here. Including the voltage-sensing domains in the simulated channel brought the linear current–voltage regime closer to the experimentally accessible voltages. The simulated permeation rate, however, still underestimated the experimental rate, because formation of the knock-on intermediate occurred too infrequently. Reducing the interaction strength between the ion and the selectivity filter did not increase conductance. In complementary simulations of gramicidin A, similar changes in interaction strength did increase the observed permeation rate. Permeation nevertheless remained substantially below the experimental value, largely because of infrequent ion recruitment into the pore lumen. Despite the need to apply large voltages to simulate the permeation process, the apparent voltage insensitivity of the permeation mechanism suggests that the direct simulation of permeation at the single-ion level can provide fundamental physiological insight into ion channel function. Notably, our simulations suggest that the knock-on permeation mechanisms in K(V)1.2 and KcsA may be different. |
format | Online Article Text |
id | pubmed-3639580 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2013 |
publisher | The Rockefeller University Press |
record_format | MEDLINE/PubMed |
spelling | pubmed-36395802013-11-01 Atomic-level simulation of current–voltage relationships in single-file ion channels Jensen, Morten Ø. Jogini, Vishwanath Eastwood, Michael P. Shaw, David E. J Gen Physiol Research Article The difficulty in characterizing ion conduction through membrane channels at the level of individual permeation events has made it challenging to elucidate the mechanistic principles underpinning this fundamental physiological process. Using long, all-atom simulations enabled by special-purpose hardware, we studied K(+) permeation across the K(V)1.2/2.1 voltage-gated potassium channel. At experimentally accessible voltages, which include the physiological range, the simulated permeation rate was substantially lower than the experimentally observed rate. The current–voltage relationship was also nonlinear but became linear at much higher voltages. We observed permeation consistent with a “knock-on” mechanism at all voltages. At high voltages, the permeation rate was in accordance with our previously reported K(V)1.2 pore-only simulations, after the simulated voltages from the previous study were recalculated using the correct method, new insight into which is provided here. Including the voltage-sensing domains in the simulated channel brought the linear current–voltage regime closer to the experimentally accessible voltages. The simulated permeation rate, however, still underestimated the experimental rate, because formation of the knock-on intermediate occurred too infrequently. Reducing the interaction strength between the ion and the selectivity filter did not increase conductance. In complementary simulations of gramicidin A, similar changes in interaction strength did increase the observed permeation rate. Permeation nevertheless remained substantially below the experimental value, largely because of infrequent ion recruitment into the pore lumen. Despite the need to apply large voltages to simulate the permeation process, the apparent voltage insensitivity of the permeation mechanism suggests that the direct simulation of permeation at the single-ion level can provide fundamental physiological insight into ion channel function. Notably, our simulations suggest that the knock-on permeation mechanisms in K(V)1.2 and KcsA may be different. The Rockefeller University Press 2013-05 /pmc/articles/PMC3639580/ /pubmed/23589581 http://dx.doi.org/10.1085/jgp.201210820 Text en © 2013 Jensen et al. This article is distributed under the terms of an Attribution–Noncommercial–Share Alike–No Mirror Sites license for the first six months after the publication date (see http://www.rupress.org/terms). After six months it is available under a Creative Commons License (Attribution–Noncommercial–Share Alike 3.0 Unported license, as described at http://creativecommons.org/licenses/by-nc-sa/3.0/). |
spellingShingle | Research Article Jensen, Morten Ø. Jogini, Vishwanath Eastwood, Michael P. Shaw, David E. Atomic-level simulation of current–voltage relationships in single-file ion channels |
title | Atomic-level simulation of current–voltage relationships in single-file ion channels |
title_full | Atomic-level simulation of current–voltage relationships in single-file ion channels |
title_fullStr | Atomic-level simulation of current–voltage relationships in single-file ion channels |
title_full_unstemmed | Atomic-level simulation of current–voltage relationships in single-file ion channels |
title_short | Atomic-level simulation of current–voltage relationships in single-file ion channels |
title_sort | atomic-level simulation of current–voltage relationships in single-file ion channels |
topic | Research Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3639580/ https://www.ncbi.nlm.nih.gov/pubmed/23589581 http://dx.doi.org/10.1085/jgp.201210820 |
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