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Resonant tunnelling and negative differential conductance in graphene transistors
The chemical stability of graphene and other free-standing two-dimensional crystals means that they can be stacked in different combinations to produce a new class of functional materials, designed for specific device applications. Here we report resonant tunnelling of Dirac fermions through a boron...
Autores principales: | , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Pub. Group
2013
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3644101/ https://www.ncbi.nlm.nih.gov/pubmed/23653206 http://dx.doi.org/10.1038/ncomms2817 |
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author | Britnell, L. Gorbachev, R. V. Geim, A. K. Ponomarenko, L. A. Mishchenko, A. Greenaway, M. T. Fromhold, T. M. Novoselov, K. S. Eaves, L. |
author_facet | Britnell, L. Gorbachev, R. V. Geim, A. K. Ponomarenko, L. A. Mishchenko, A. Greenaway, M. T. Fromhold, T. M. Novoselov, K. S. Eaves, L. |
author_sort | Britnell, L. |
collection | PubMed |
description | The chemical stability of graphene and other free-standing two-dimensional crystals means that they can be stacked in different combinations to produce a new class of functional materials, designed for specific device applications. Here we report resonant tunnelling of Dirac fermions through a boron nitride barrier, a few atomic layers thick, sandwiched between two graphene electrodes. The resonance occurs when the electronic spectra of the two electrodes are aligned. The resulting negative differential conductance in the device characteristics persists up to room temperature and is gate voltage-tuneable due to graphene’s unique Dirac-like spectrum. Although conventional resonant tunnelling devices comprising a quantum well sandwiched between two tunnel barriers are tens of nanometres thick, the tunnelling carriers in our devices cross only a few atomic layers, offering the prospect of ultra-fast transit times. This feature, combined with the multi-valued form of the device characteristics, has potential for applications in high-frequency and logic devices. |
format | Online Article Text |
id | pubmed-3644101 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2013 |
publisher | Nature Pub. Group |
record_format | MEDLINE/PubMed |
spelling | pubmed-36441012013-05-17 Resonant tunnelling and negative differential conductance in graphene transistors Britnell, L. Gorbachev, R. V. Geim, A. K. Ponomarenko, L. A. Mishchenko, A. Greenaway, M. T. Fromhold, T. M. Novoselov, K. S. Eaves, L. Nat Commun Article The chemical stability of graphene and other free-standing two-dimensional crystals means that they can be stacked in different combinations to produce a new class of functional materials, designed for specific device applications. Here we report resonant tunnelling of Dirac fermions through a boron nitride barrier, a few atomic layers thick, sandwiched between two graphene electrodes. The resonance occurs when the electronic spectra of the two electrodes are aligned. The resulting negative differential conductance in the device characteristics persists up to room temperature and is gate voltage-tuneable due to graphene’s unique Dirac-like spectrum. Although conventional resonant tunnelling devices comprising a quantum well sandwiched between two tunnel barriers are tens of nanometres thick, the tunnelling carriers in our devices cross only a few atomic layers, offering the prospect of ultra-fast transit times. This feature, combined with the multi-valued form of the device characteristics, has potential for applications in high-frequency and logic devices. Nature Pub. Group 2013-04-30 /pmc/articles/PMC3644101/ /pubmed/23653206 http://dx.doi.org/10.1038/ncomms2817 Text en Copyright © 2013, Nature Publishing Group, a division of Macmillan Publishers Limited. All Rights Reserved. http://creativecommons.org/licenses/by-nc-sa/3.0/ This work is licensed under a Creative Commons Attribution-NonCommercial-ShareAlike 3.0 Unported License. To view a copy of this license, visit http://creativecommons.org/licenses/by-nc-sa/3.0/ |
spellingShingle | Article Britnell, L. Gorbachev, R. V. Geim, A. K. Ponomarenko, L. A. Mishchenko, A. Greenaway, M. T. Fromhold, T. M. Novoselov, K. S. Eaves, L. Resonant tunnelling and negative differential conductance in graphene transistors |
title | Resonant tunnelling and negative differential conductance in graphene transistors |
title_full | Resonant tunnelling and negative differential conductance in graphene transistors |
title_fullStr | Resonant tunnelling and negative differential conductance in graphene transistors |
title_full_unstemmed | Resonant tunnelling and negative differential conductance in graphene transistors |
title_short | Resonant tunnelling and negative differential conductance in graphene transistors |
title_sort | resonant tunnelling and negative differential conductance in graphene transistors |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3644101/ https://www.ncbi.nlm.nih.gov/pubmed/23653206 http://dx.doi.org/10.1038/ncomms2817 |
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