Cargando…
Resonant tunnelling and negative differential conductance in graphene transistors
The chemical stability of graphene and other free-standing two-dimensional crystals means that they can be stacked in different combinations to produce a new class of functional materials, designed for specific device applications. Here we report resonant tunnelling of Dirac fermions through a boron...
Autores principales: | Britnell, L., Gorbachev, R. V., Geim, A. K., Ponomarenko, L. A., Mishchenko, A., Greenaway, M. T., Fromhold, T. M., Novoselov, K. S., Eaves, L. |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Pub. Group
2013
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3644101/ https://www.ncbi.nlm.nih.gov/pubmed/23653206 http://dx.doi.org/10.1038/ncomms2817 |
Ejemplares similares
-
Graphene’s non-equilibrium fermions reveal Doppler-shifted magnetophonon resonances accompanied by Mach supersonic and Landau velocity effects
por: Greenaway, M. T., et al.
Publicado: (2021) -
Long-range ballistic transport of Brown-Zak fermions in graphene superlattices
por: Barrier, Julien, et al.
Publicado: (2020) -
Tunnel field-effect transistors for sensitive terahertz detection
por: Gayduchenko, I., et al.
Publicado: (2021) -
Strong magnetophonon oscillations in extra-large graphene
por: Kumaravadivel, P., et al.
Publicado: (2019) -
Planar and van der Waals heterostructures for vertical tunnelling single electron transistors
por: Kim, Gwangwoo, et al.
Publicado: (2019)