Comparative Study on the Performance of Five Different Hall Effect Devices

Five different Hall Effect sensors were modeled and their performance evaluated using a three dimensional simulator. The physical structure of the implemented sensors reproduces a certain technological fabrication process. Hall voltage, absolute, current-related, voltage-related and power-related se...

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Detalles Bibliográficos
Autores principales: Paun, Maria-Alexandra, Sallese, Jean-Michel, Kayal, Maher
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Molecular Diversity Preservation International (MDPI) 2013
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3649431/
https://www.ncbi.nlm.nih.gov/pubmed/23385419
http://dx.doi.org/10.3390/s130202093
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author Paun, Maria-Alexandra
Sallese, Jean-Michel
Kayal, Maher
author_facet Paun, Maria-Alexandra
Sallese, Jean-Michel
Kayal, Maher
author_sort Paun, Maria-Alexandra
collection PubMed
description Five different Hall Effect sensors were modeled and their performance evaluated using a three dimensional simulator. The physical structure of the implemented sensors reproduces a certain technological fabrication process. Hall voltage, absolute, current-related, voltage-related and power-related sensitivities were obtained for each sensor. The effect of artificial offset was also investigated for cross-like structures. The simulation procedure guides the designer in choosing the Hall cell optimum shape, dimensions and device polarization conditions that would allow the highest performance.
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spelling pubmed-36494312013-06-04 Comparative Study on the Performance of Five Different Hall Effect Devices Paun, Maria-Alexandra Sallese, Jean-Michel Kayal, Maher Sensors (Basel) Article Five different Hall Effect sensors were modeled and their performance evaluated using a three dimensional simulator. The physical structure of the implemented sensors reproduces a certain technological fabrication process. Hall voltage, absolute, current-related, voltage-related and power-related sensitivities were obtained for each sensor. The effect of artificial offset was also investigated for cross-like structures. The simulation procedure guides the designer in choosing the Hall cell optimum shape, dimensions and device polarization conditions that would allow the highest performance. Molecular Diversity Preservation International (MDPI) 2013-02-05 /pmc/articles/PMC3649431/ /pubmed/23385419 http://dx.doi.org/10.3390/s130202093 Text en © 2013 by the authors; licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution license (http://creativecommons.org/licenses/by/3.0/).
spellingShingle Article
Paun, Maria-Alexandra
Sallese, Jean-Michel
Kayal, Maher
Comparative Study on the Performance of Five Different Hall Effect Devices
title Comparative Study on the Performance of Five Different Hall Effect Devices
title_full Comparative Study on the Performance of Five Different Hall Effect Devices
title_fullStr Comparative Study on the Performance of Five Different Hall Effect Devices
title_full_unstemmed Comparative Study on the Performance of Five Different Hall Effect Devices
title_short Comparative Study on the Performance of Five Different Hall Effect Devices
title_sort comparative study on the performance of five different hall effect devices
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3649431/
https://www.ncbi.nlm.nih.gov/pubmed/23385419
http://dx.doi.org/10.3390/s130202093
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