A Dynamic Range Expansion Technique for CMOS Image Sensors with Dual Charge Storage in a Pixel and Multiple Sampling

A dynamic range expansion technique for CMOS image sensors with dual charge storage in a pixel and multiple sampling technique is presented. Each pixel contains a photodiode and a storage diode which is connected to the photodiode via a separation gate. The sensitivity of the signal charge in the st...

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Detalles Bibliográficos
Autores principales: Shafie, Suhaidi, Kawahito, Shoji, Itoh, Shinya
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Molecular Diversity Preservation International (MDPI) 2008
Materias:
Full Research Paper
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3663033/
https://www.ncbi.nlm.nih.gov/pubmed/27879802
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author Shafie, Suhaidi
Kawahito, Shoji
Itoh, Shinya
author_facet Shafie, Suhaidi
Kawahito, Shoji
Itoh, Shinya
author_sort Shafie, Suhaidi
collection PubMed
description A dynamic range expansion technique for CMOS image sensors with dual charge storage in a pixel and multiple sampling technique is presented. Each pixel contains a photodiode and a storage diode which is connected to the photodiode via a separation gate. The sensitivity of the signal charge in the storage diode can be controlled either by a separation gate which limits the charge to flow into the storage diode or by controlling the accumulation time in the storage diode. The operation of the sensitivity control with separation gate techniques is simulated and it is found that a blocking layer to the storage diode plays an important role for high controllability of sensitivity of the storage diode. A prototype chip for testing multiple short time accumulations is fabricated and measured.
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spelling pubmed-36630332013-05-30 A Dynamic Range Expansion Technique for CMOS Image Sensors with Dual Charge Storage in a Pixel and Multiple Sampling Shafie, Suhaidi Kawahito, Shoji Itoh, Shinya Sensors (Basel) Full Research Paper A dynamic range expansion technique for CMOS image sensors with dual charge storage in a pixel and multiple sampling technique is presented. Each pixel contains a photodiode and a storage diode which is connected to the photodiode via a separation gate. The sensitivity of the signal charge in the storage diode can be controlled either by a separation gate which limits the charge to flow into the storage diode or by controlling the accumulation time in the storage diode. The operation of the sensitivity control with separation gate techniques is simulated and it is found that a blocking layer to the storage diode plays an important role for high controllability of sensitivity of the storage diode. A prototype chip for testing multiple short time accumulations is fabricated and measured. Molecular Diversity Preservation International (MDPI) 2008-03-18 /pmc/articles/PMC3663033/ /pubmed/27879802 Text en © 2008 by MDPI Reproduction is permitted for noncommercial purposes.
spellingShingle Full Research Paper
Shafie, Suhaidi
Kawahito, Shoji
Itoh, Shinya
A Dynamic Range Expansion Technique for CMOS Image Sensors with Dual Charge Storage in a Pixel and Multiple Sampling
title A Dynamic Range Expansion Technique for CMOS Image Sensors with Dual Charge Storage in a Pixel and Multiple Sampling
title_full A Dynamic Range Expansion Technique for CMOS Image Sensors with Dual Charge Storage in a Pixel and Multiple Sampling
title_fullStr A Dynamic Range Expansion Technique for CMOS Image Sensors with Dual Charge Storage in a Pixel and Multiple Sampling
title_full_unstemmed A Dynamic Range Expansion Technique for CMOS Image Sensors with Dual Charge Storage in a Pixel and Multiple Sampling
title_short A Dynamic Range Expansion Technique for CMOS Image Sensors with Dual Charge Storage in a Pixel and Multiple Sampling
title_sort dynamic range expansion technique for cmos image sensors with dual charge storage in a pixel and multiple sampling
topic Full Research Paper
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3663033/
https://www.ncbi.nlm.nih.gov/pubmed/27879802
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