Cargando…
Zn(3)N(2) nanowires: growth, properties and oxidation
Zinc nitride (Zn(3)N(2)) nanowires (NWs) with diameters of 50 to 100 nm and a cubic crystal structure have been grown on 1 nm Au/Al(2)O(3) via the reaction of Zn with NH(3) including H(2) between 500°C and 600°C. These exhibited an optical band gap of ≈ 3.2 eV, estimated from steady state absorption...
Autores principales: | Zervos, Matthew, Karipi, Chrystalla, Othonos, Andreas |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer
2013
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3663681/ https://www.ncbi.nlm.nih.gov/pubmed/23663554 http://dx.doi.org/10.1186/1556-276X-8-221 |
Ejemplares similares
-
The nitridation of ZnO nanowires
por: Zervos, Matthew, et al.
Publicado: (2012) -
An investigation into the conversion of In(2)O(3 )into InN nanowires
por: Papageorgiou, Polina, et al.
Publicado: (2011) -
Gallium hydride vapor phase epitaxy of GaN nanowires
por: Zervos, Matthew, et al.
Publicado: (2011) -
Synthesis of Tin Nitride Sn(x)N(y)Nanowires by Chemical Vapour Deposition
por: Zervos, Matthew, et al.
Publicado: (2009) -
Tin Oxide Nanowires: The Influence of Trap States on Ultrafast Carrier Relaxation
por: Othonos, Andreas, et al.
Publicado: (2009)