High-performance bilayer flexible resistive random access memory based on low-temperature thermal atomic layer deposition

We demonstrated a flexible resistive random access memory device through a low-temperature atomic layer deposition process. The device is composed of an HfO(2)/Al(2)O(3)-based functional stack on an indium tin oxide-coated polyethylene terephthalate substrate. After the initial reset operation, the...

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Detalles Bibliográficos
Autores principales: Fang, Run-Chen, Sun, Qing-Qing, Zhou, Peng, Yang, Wen, Wang, Peng-Fei, Zhang, David Wei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2013
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3663830/
https://www.ncbi.nlm.nih.gov/pubmed/23421424
http://dx.doi.org/10.1186/1556-276X-8-92

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3663830/
https://www.ncbi.nlm.nih.gov/pubmed/23421424
http://dx.doi.org/10.1186/1556-276X-8-92

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