Optical properties of GaP/GaNP core/shell nanowires: a temperature-dependent study

Recombination processes in GaP/GaNP core/shell nanowires (NWs) grown on Si are studied by employing temperature-dependent continuous wave and time-resolved photoluminescence (PL) spectroscopies. The NWs exhibit bright PL emissions due to radiative carrier recombination in the GaNP shell. Though the...

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Detalles Bibliográficos
Autores principales: Dobrovolsky, Alexander, Chen, Shula, Kuang, Yanjin, Sukrittanon, Supanee, Tu, Charles W, Chen, Weimin M, Buyanova, Irina A
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2013
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3673909/
https://www.ncbi.nlm.nih.gov/pubmed/23680085
http://dx.doi.org/10.1186/1556-276X-8-239

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3673909/
https://www.ncbi.nlm.nih.gov/pubmed/23680085
http://dx.doi.org/10.1186/1556-276X-8-239

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