Cargando…
Anisotropic two-dimensional electron gas at the LaAlO(3)/SrTiO(3) (110) interface
The observation of a high-mobility two-dimensional electron gas between two insulating complex oxides, especially LaAlO(3)/SrTiO(3), has enhanced the potential of oxides for electronics. The occurrence of this conductivity is believed to be driven by polarization discontinuity, leading to an electro...
Autores principales: | Annadi, A., Zhang, Q., Renshaw Wang, X., Tuzla, N., Gopinadhan, K., Lü, W. M., Roy Barman, A., Liu, Z. Q., Srivastava, A., Saha, S., Zhao, Y. L., Zeng, S. W., Dhar, S., Olsson, E., Gu, B., Yunoki, S., Maekawa, S., Hilgenkamp, H., Venkatesan, T., Ariando |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Pub. Group
2013
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3674248/ https://www.ncbi.nlm.nih.gov/pubmed/23673623 http://dx.doi.org/10.1038/ncomms2804 |
Ejemplares similares
-
Atomic Origin of Interface‐Dependent Oxygen Migration by Electrochemical Gating at the LaAlO(3)–SrTiO(3) Heterointerface
por: Song, Dongsheng, et al.
Publicado: (2020) -
Parallel charge sheets of electron liquid and gas in La(0.5)Sr(0.5)TiO(3)/SrTiO(3) heterostructures
por: Renshaw Wang, X., et al.
Publicado: (2015) -
Tailoring the Two Dimensional Electron Gas at Polar ABO(3)/SrTiO(3) Interfaces for Oxide Electronics
por: Li, Changjian, et al.
Publicado: (2015) -
High mobility conduction at (110) and (111) LaAlO(3)/SrTiO(3) interfaces
por: Herranz, G., et al.
Publicado: (2012) -
Anisotropic electrical resistance in mesoscopic LaAlO(3)/SrTiO(3) devices with individual domain walls
por: Goble, Nicholas J., et al.
Publicado: (2017)