Cargando…
Femtosecond pulsed laser deposition of silicon thin films
Optimisation of femtosecond pulsed laser deposition parameters for the fabrication of silicon thin films is discussed. Substrate temperature, gas pressure and gas type are used to better understand the deposition process and optimise it for the fabrication of high-quality thin films designed for opt...
Autores principales: | Murray, Matthew, Jose, Gin, Richards, Billy, Jha, Animesh |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer
2013
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3693986/ https://www.ncbi.nlm.nih.gov/pubmed/23758871 http://dx.doi.org/10.1186/1556-276X-8-272 |
Ejemplares similares
-
Growth and characterization of Cu(In,Ga)Se(2) thin films by nanosecond and femtosecond pulsed laser deposition
por: Chen, Shih-Chen, et al.
Publicado: (2014) -
Crystallization of amorphous silicon thin films deposited by PECVD on nickel-metalized porous silicon
por: Ben Slama, Sonia, et al.
Publicado: (2012) -
Characterization of MHz pulse repetition rate femtosecond laser-irradiated gold-coated silicon surfaces
por: Sivakumar, Manickam, et al.
Publicado: (2011) -
Composition and crystalline properties of TiNi thin films prepared by pulsed laser deposition under vacuum and in ambient Ar gas
por: Cha, Jeong Ok, et al.
Publicado: (2012) -
Nanocolumnar Preferentially Oriented PSZT Thin Films Deposited on Thermally Grown Silicon Dioxide
por: Sriram, S, et al.
Publicado: (2008)