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Monolithic Active Pixel Sensors (MAPS) in a Quadruple Well Technology for Nearly 100% Fill Factor and Full CMOS Pixels

In this paper we present a novel, quadruple well process developed in a modern 0.18 μm CMOS technology called INMAPS. On top of the standard process, we have added a deep P implant that can be used to form a deep P-well and provide screening of N-wells from the P-doped epitaxial layer. This prevents...

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Detalles Bibliográficos
Autores principales: Ballin, Jamie Alexander, Crooks, Jamie Phillip, Dauncey, Paul Dominic, Magnan, Anne-Marie, Mikami, Yoshinari, Miller, Owen Daniel, Noy, Matthew, Rajovic, Vladimir, Stanitzki, Marcel, Stefanov, Konstantin, Turchetta, Renato, Tyndel, Mike, Villani, Enrico Giulio, Watson, Nigel Keith, Wilson, John Allan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Molecular Diversity Preservation International (MDPI) 2008
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3705507/
https://www.ncbi.nlm.nih.gov/pubmed/27873817
http://dx.doi.org/10.3390/s8095336