A Review of the CMOS Buried Double Junction (BDJ) Photodetector and its Applications

A CMOS Buried Double Junction PN (BDJ) photodetector consists of two vertically-stacked photodiodes. It can be operated as a photodiode with improved performance and wavelength-sensitive response. This paper presents a review of this device and its applications. The CMOS implementation and operating...

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Detalles Bibliográficos
Autores principales: Feruglio, Sylvain, Lu, Guo-Neng, Garda, Patrick, Vasilescu, Gabriel
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Molecular Diversity Preservation International (MDPI) 2008
Materias:
Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3707468/
https://www.ncbi.nlm.nih.gov/pubmed/27873887
http://dx.doi.org/10.3390/s8106566
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author Feruglio, Sylvain
Lu, Guo-Neng
Garda, Patrick
Vasilescu, Gabriel
author_facet Feruglio, Sylvain
Lu, Guo-Neng
Garda, Patrick
Vasilescu, Gabriel
author_sort Feruglio, Sylvain
collection PubMed
description A CMOS Buried Double Junction PN (BDJ) photodetector consists of two vertically-stacked photodiodes. It can be operated as a photodiode with improved performance and wavelength-sensitive response. This paper presents a review of this device and its applications. The CMOS implementation and operating principle are firstly described. This includes the description of several key aspects directly related to the device performances, such as surface reflection, photon absorption and electron-hole pair generation, photocurrent and dark current generation, etc. SPICE modelling of the detector is then presented. Next, design and process considerations are proposed in order to improve the BDJ performance. Finally, several BDJ-detector-based image sensors provide a survey of their applications.
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spelling pubmed-37074682013-07-10 A Review of the CMOS Buried Double Junction (BDJ) Photodetector and its Applications Feruglio, Sylvain Lu, Guo-Neng Garda, Patrick Vasilescu, Gabriel Sensors (Basel) Review A CMOS Buried Double Junction PN (BDJ) photodetector consists of two vertically-stacked photodiodes. It can be operated as a photodiode with improved performance and wavelength-sensitive response. This paper presents a review of this device and its applications. The CMOS implementation and operating principle are firstly described. This includes the description of several key aspects directly related to the device performances, such as surface reflection, photon absorption and electron-hole pair generation, photocurrent and dark current generation, etc. SPICE modelling of the detector is then presented. Next, design and process considerations are proposed in order to improve the BDJ performance. Finally, several BDJ-detector-based image sensors provide a survey of their applications. Molecular Diversity Preservation International (MDPI) 2008-10-23 /pmc/articles/PMC3707468/ /pubmed/27873887 http://dx.doi.org/10.3390/s8106566 Text en © 2008 by the authors; licensee Molecular Diversity Preservation International, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution license (http://creativecommons.org/licenses/by/3.0/).
spellingShingle Review
Feruglio, Sylvain
Lu, Guo-Neng
Garda, Patrick
Vasilescu, Gabriel
A Review of the CMOS Buried Double Junction (BDJ) Photodetector and its Applications
title A Review of the CMOS Buried Double Junction (BDJ) Photodetector and its Applications
title_full A Review of the CMOS Buried Double Junction (BDJ) Photodetector and its Applications
title_fullStr A Review of the CMOS Buried Double Junction (BDJ) Photodetector and its Applications
title_full_unstemmed A Review of the CMOS Buried Double Junction (BDJ) Photodetector and its Applications
title_short A Review of the CMOS Buried Double Junction (BDJ) Photodetector and its Applications
title_sort review of the cmos buried double junction (bdj) photodetector and its applications
topic Review
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3707468/
https://www.ncbi.nlm.nih.gov/pubmed/27873887
http://dx.doi.org/10.3390/s8106566
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