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Growth of single-crystalline cobalt silicide nanowires and their field emission property
In this work, cobalt silicide nanowires were synthesized by chemical vapor deposition processes on Si (100) substrates with anhydrous cobalt chloride (CoCl(2)) as precursors. Processing parameters, including the temperature of Si (100) substrates, the gas flow rate, and the pressure of reactions wer...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2013
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3710505/ https://www.ncbi.nlm.nih.gov/pubmed/23819795 http://dx.doi.org/10.1186/1556-276X-8-308 |