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Fabrication of vertical GaN/InGaN heterostructure nanowires using Ni-Au bi-metal catalysts
We have fabricated the vertically aligned coaxial or longitudinal heterostructure GaN/InGaN nanowires. The GaN nanowires are first vertically grown by vapor–liquid-solid mechanism using Au/Ni bi-metal catalysts. The GaN nanowires are single crystal grown in the [0001] direction, with a length and di...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer
2013
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3720202/ https://www.ncbi.nlm.nih.gov/pubmed/23803283 http://dx.doi.org/10.1186/1556-276X-8-299 |