Cargando…
Bandgap Opening by Patterning Graphene
Owing to its remarkable electronic and transport properties, graphene has great potential of replacing silicon for next-generation electronics and optoelectronics; but its zero bandgap associated with Dirac fermions prevents such applications. Among numerous attempts to create semiconducting graphen...
Autores principales: | Dvorak, Marc, Oswald, William, Wu, Zhigang |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2013
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3724180/ https://www.ncbi.nlm.nih.gov/pubmed/23887253 http://dx.doi.org/10.1038/srep02289 |
Ejemplares similares
-
Ultrafast growth of nanocrystalline graphene films by quenching and grain-size-dependent strength and bandgap opening
por: Zhao, Tong, et al.
Publicado: (2019) -
Open‐Bandgap Graphene‐Based Field‐Effect Transistor Using Oligo(phenylene‐ethynylene) Interfacial Chemistry
por: Kim, Kyung Ho, et al.
Publicado: (2022) -
Dirac cone move and bandgap on/off switching of graphene superlattice
por: Jia, Tian-Tian, et al.
Publicado: (2016) -
Narrow bandgap oxide nanoparticles coupled with graphene for high performance mid-infrared photodetection
por: Yu, Xuechao, et al.
Publicado: (2018) -
Energy Bandgap and Edge States in an Epitaxially Grown Graphene/h-BN Heterostructure
por: Hwang, Beomyong, et al.
Publicado: (2016)