High Performance Molybdenum Disulfide Amorphous Silicon Heterojunction Photodetector

One important use of layered semiconductors such as molybdenum disulfide (MoS(2)) could be in making novel heterojunction devices leading to functionalities unachievable using conventional semiconductors. Here we demonstrate a metal-semiconductor-metal heterojunction photodetector, made of MoS(2) and amorphous silicon (a-Si), with rise and fall times of about 0.3 ms. The transient response does not show persistent (residual) photoconductivity, unlike conventional a-Si devices where it may last 3–5 ms, thus making this heterojunction roughly 10X faster. A photoresponsivity of 210 mA/W is measured at green light, the wavelength used in commercial imaging systems, which is 2−4X larger than that of a-Si and best reported MoS(2) devices. The device could find applications in large area electronics, such as biomedical imaging, where a fast response is critical.