Ferroelectric BaTiO(3)/SrTiO(3) multilayered thin films for room-temperature tunable microwave elements

Ferroelectric BaTiO(3)/SrTiO(3) with optimized c-axis-oriented multilayered thin films were epitaxially fabricated on (001) MgO substrates. The microstructural studies indicate that the in-plane interface relationships between the films as well as the substrate are determined to be (001)(SrTiO3)//(0...

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Detalles Bibliográficos
Autores principales: Liu, Ming, Ma, Chunrui, Collins, Gregory, Liu, Jian, Chen, Chonglin, Alemayehu, Andy D, Subramanyam, Guru, Ding, Ying, Chen, Jianghua, Dai, Chao, Lin, Yuan, Cole, Melanie W
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2013
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3735410/
https://www.ncbi.nlm.nih.gov/pubmed/23895295
http://dx.doi.org/10.1186/1556-276X-8-338
Descripción
Sumario:Ferroelectric BaTiO(3)/SrTiO(3) with optimized c-axis-oriented multilayered thin films were epitaxially fabricated on (001) MgO substrates. The microstructural studies indicate that the in-plane interface relationships between the films as well as the substrate are determined to be (001)(SrTiO3)//(001)(BaTiO3)//(001)(MgO) and [100](SrTiO3)//[100](BaTiO3)//[100](MgO). The microwave (5 to 18 GHz) dielectric measurements reveal that the multilayered thin films have excellent dielectric properties with large dielectric constant, low dielectric loss, and high dielectric tunability, which suggests that the as-grown ferroelectric multilayered thin films can be developed for room-temperature tunable microwave elements and related device applications.

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