Cargando…

A hot hole-programmed and low-temperature-formed SONOS flash memory

In this study, a high-performance Ti(x)Zr(y)Si(z)O flash memory is demonstrated using a sol–gel spin-coating method and formed under a low annealing temperature. The high-efficiency charge storage layer is formed by depositing a well-mixed solution of titanium tetrachloride, silicon tetrachloride, a...

Descripción completa

Detalles Bibliográficos
Autores principales: Chang, Yuan-Ming, Yang, Wen-Luh, Liu, Sheng-Hsien, Hsiao, Yu-Ping, Wu, Jia-Yo, Wu, Chi-Chang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2013
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3735447/
https://www.ncbi.nlm.nih.gov/pubmed/23899050
http://dx.doi.org/10.1186/1556-276X-8-340
Descripción
Sumario:In this study, a high-performance Ti(x)Zr(y)Si(z)O flash memory is demonstrated using a sol–gel spin-coating method and formed under a low annealing temperature. The high-efficiency charge storage layer is formed by depositing a well-mixed solution of titanium tetrachloride, silicon tetrachloride, and zirconium tetrachloride, followed by 60 s of annealing at 600°C. The flash memory exhibits a noteworthy hot hole trapping characteristic and excellent electrical properties regarding memory window, program/erase speeds, and charge retention. At only 6-V operation, the program/erase speeds can be as fast as 120:5.2 μs with a 2-V shift, and the memory window can be up to 8 V. The retention times are extrapolated to 10(6) s with only 5% (at 85°C) and 10% (at 125°C) charge loss. The barrier height of the Ti(x)Zr(y)Si(z)O film is demonstrated to be 1.15 eV for hole trapping, through the extraction of the Poole-Frenkel current. The excellent performance of the memory is attributed to high trapping sites of the low-temperature-annealed, high-κ sol–gel film.