A hot hole-programmed and low-temperature-formed SONOS flash memory

In this study, a high-performance Ti(x)Zr(y)Si(z)O flash memory is demonstrated using a sol–gel spin-coating method and formed under a low annealing temperature. The high-efficiency charge storage layer is formed by depositing a well-mixed solution of titanium tetrachloride, silicon tetrachloride, a...

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Detalles Bibliográficos
Autores principales: Chang, Yuan-Ming, Yang, Wen-Luh, Liu, Sheng-Hsien, Hsiao, Yu-Ping, Wu, Jia-Yo, Wu, Chi-Chang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2013
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3735447/
https://www.ncbi.nlm.nih.gov/pubmed/23899050
http://dx.doi.org/10.1186/1556-276X-8-340

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3735447/
https://www.ncbi.nlm.nih.gov/pubmed/23899050
http://dx.doi.org/10.1186/1556-276X-8-340

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