Coexistence of high performance resistance and capacitance memory based on multilayered metal-oxide structures

The Au/DyMnO(3)/Nb:SrTiO(3)/Au stack was demonstrated to be not only a high performance memristor but also a good memcapacitor. The switching time is below 10 ns, the retention is longer than 10(5) s, and the change ratio of resistance (or capacitance) is larger than 100 over the 10(8) switching cyc...

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Detalles Bibliográficos
Autores principales: Yan, Z. B., Liu, J. -M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2013
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3748856/
https://www.ncbi.nlm.nih.gov/pubmed/23963467
http://dx.doi.org/10.1038/srep02482
Descripción
Sumario:The Au/DyMnO(3)/Nb:SrTiO(3)/Au stack was demonstrated to be not only a high performance memristor but also a good memcapacitor. The switching time is below 10 ns, the retention is longer than 10(5) s, and the change ratio of resistance (or capacitance) is larger than 100 over the 10(8) switching cycles. Moreover, this stack has a broad range of intermediate states that are tunable by the operating voltages. It is indicated that the memory effects originate from the Nb:SrTiO(3)/Au junction where the barrier profile is electrically modulated. The serial connected Au/DyMnO(3)/Nb:SrTiO(3) stack behaves as a high nonlinear resistor paralleling with a capacitor, which raises the capacitance change ratio and enhances the memory stability of the device.

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