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Coexistence of high performance resistance and capacitance memory based on multilayered metal-oxide structures
The Au/DyMnO(3)/Nb:SrTiO(3)/Au stack was demonstrated to be not only a high performance memristor but also a good memcapacitor. The switching time is below 10 ns, the retention is longer than 10(5) s, and the change ratio of resistance (or capacitance) is larger than 100 over the 10(8) switching cyc...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Nature Publishing Group
2013
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3748856/ https://www.ncbi.nlm.nih.gov/pubmed/23963467 http://dx.doi.org/10.1038/srep02482 |