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Inelastic light scattering by 2D electron system with SO interaction

Inelastic light scattering by electrons of a two-dimensional system taking into account the Rashba spin-orbit interaction (SOI) in the conduction band is theoretically investigated. The case of resonance scattering (frequencies of incident and scattered light are close to the effective distance betw...

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Detalles Bibliográficos
Autores principales: Chaplik, Alexander V, Magarill, Lev I, Vitlina, Ritta Z
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer 2012
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3762061/
https://www.ncbi.nlm.nih.gov/pubmed/23021440
http://dx.doi.org/10.1186/1556-276X-7-537
Descripción
Sumario:Inelastic light scattering by electrons of a two-dimensional system taking into account the Rashba spin-orbit interaction (SOI) in the conduction band is theoretically investigated. The case of resonance scattering (frequencies of incident and scattered light are close to the effective distance between conduction and spin-split-off bands of the A(III)B(V)-type semiconductor) is considered. As opposed to the case of SOI absence, the plasmon peak in the scattering occurs even at strictly perpendicular polarizations of the incident and scattered waves. Under definite geometry, one can observe the spectrum features conditioned by only single-particle transitions. In the general case of elliptically polarized incident and scattered light, the amplitude of the plasmon peak turns out to be sensitive to the sign of the SOI coupling.