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Black silicon with self-cleaning surface prepared by wetting processes
This paper reports on a simple method to prepare a hydrophobic surface on black silicon, which is fabricated by metal-assisted wet etching. To increase the reaction rate, the reaction device was placed in a heat collection-constant temperature type magnetic stirrer and set at room temperature. It wa...
Autores principales: | , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer
2013
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3765183/ https://www.ncbi.nlm.nih.gov/pubmed/23941184 http://dx.doi.org/10.1186/1556-276X-8-351 |
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author | Zhang, Ting Zhang, Peng Li, Shibin Li, Wei Wu, Zhiming Jiang, Yadong |
author_facet | Zhang, Ting Zhang, Peng Li, Shibin Li, Wei Wu, Zhiming Jiang, Yadong |
author_sort | Zhang, Ting |
collection | PubMed |
description | This paper reports on a simple method to prepare a hydrophobic surface on black silicon, which is fabricated by metal-assisted wet etching. To increase the reaction rate, the reaction device was placed in a heat collection-constant temperature type magnetic stirrer and set at room temperature. It was demonstrated that the micro- and nanoscale spikes on the black silicon made the surface become hydrophobic. As the reaction rate increases, the surface hydrophobicity becomes more outstanding and presents self-cleaning until the very end. The reflectance of the black silicon is drastically suppressed over a broad spectral range due to the unique geometry, which is effective for the enhancement of absorption. |
format | Online Article Text |
id | pubmed-3765183 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2013 |
publisher | Springer |
record_format | MEDLINE/PubMed |
spelling | pubmed-37651832013-09-10 Black silicon with self-cleaning surface prepared by wetting processes Zhang, Ting Zhang, Peng Li, Shibin Li, Wei Wu, Zhiming Jiang, Yadong Nanoscale Res Lett Nano Express This paper reports on a simple method to prepare a hydrophobic surface on black silicon, which is fabricated by metal-assisted wet etching. To increase the reaction rate, the reaction device was placed in a heat collection-constant temperature type magnetic stirrer and set at room temperature. It was demonstrated that the micro- and nanoscale spikes on the black silicon made the surface become hydrophobic. As the reaction rate increases, the surface hydrophobicity becomes more outstanding and presents self-cleaning until the very end. The reflectance of the black silicon is drastically suppressed over a broad spectral range due to the unique geometry, which is effective for the enhancement of absorption. Springer 2013-08-13 /pmc/articles/PMC3765183/ /pubmed/23941184 http://dx.doi.org/10.1186/1556-276X-8-351 Text en Copyright ©2013 Zhang et al.; licensee Springer. http://creativecommons.org/licenses/by/2.0 This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/2.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. |
spellingShingle | Nano Express Zhang, Ting Zhang, Peng Li, Shibin Li, Wei Wu, Zhiming Jiang, Yadong Black silicon with self-cleaning surface prepared by wetting processes |
title | Black silicon with self-cleaning surface prepared by wetting processes |
title_full | Black silicon with self-cleaning surface prepared by wetting processes |
title_fullStr | Black silicon with self-cleaning surface prepared by wetting processes |
title_full_unstemmed | Black silicon with self-cleaning surface prepared by wetting processes |
title_short | Black silicon with self-cleaning surface prepared by wetting processes |
title_sort | black silicon with self-cleaning surface prepared by wetting processes |
topic | Nano Express |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3765183/ https://www.ncbi.nlm.nih.gov/pubmed/23941184 http://dx.doi.org/10.1186/1556-276X-8-351 |
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