Energy transfer from luminescent centers to Er(3+) in erbium-doped silicon-rich oxide films

The energy transfer mechanism between luminescent centers (LCs) and Er(3+) in erbium-doped silicon-rich oxide (SROEr) films prepared by electron beam evaporation is investigated. Intense photoluminescence of the LCs (weak oxygen bonds, neutral oxygen vacancies, and Si=O states) within the active matrixes is obtained. Fast energy transfer from Si=O states to Er(3+) takes advantage in the SROEr film and enhances the light emission from Er(3+). The introduction of Si nanoclusters, which induces the Si=O states and facilitates the photon absorption of the Si=O states, is essential to obtain intense photoluminescence from both Si=O states and Er(3+).