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X-ray characterization of Ge dots epitaxially grown on nanostructured Si islands on silicon-on-insulator substrates

On the way to integrate lattice mismatched semiconductors on Si(001), the Ge/Si heterosystem was used as a case study for the concept of compliant substrate effects that offer the vision to be able to integrate defect-free alternative semiconductor structures on Si. Ge nanoclusters were selectively...

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Autores principales: Zaumseil, Peter, Kozlowski, Grzegorz, Yamamoto, Yuji, Schubert, Markus Andreas, Schroeder, Thomas
Formato: Online Artículo Texto
Lenguaje:English
Publicado: International Union of Crystallography 2013
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3769056/
https://www.ncbi.nlm.nih.gov/pubmed/24046490
http://dx.doi.org/10.1107/S0021889813003518
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author Zaumseil, Peter
Kozlowski, Grzegorz
Yamamoto, Yuji
Schubert, Markus Andreas
Schroeder, Thomas
author_facet Zaumseil, Peter
Kozlowski, Grzegorz
Yamamoto, Yuji
Schubert, Markus Andreas
Schroeder, Thomas
author_sort Zaumseil, Peter
collection PubMed
description On the way to integrate lattice mismatched semiconductors on Si(001), the Ge/Si heterosystem was used as a case study for the concept of compliant substrate effects that offer the vision to be able to integrate defect-free alternative semiconductor structures on Si. Ge nanoclusters were selectively grown by chemical vapour deposition on Si nano-islands on silicon-on-insulator (SOI) substrates. The strain states of Ge clusters and Si islands were measured by grazing-incidence diffraction using a laboratory-based X-ray diffraction technique. A tensile strain of up to 0.5% was detected in the Si islands after direct Ge deposition. Using a thin (∼10 nm) SiGe buffer layer between Si and Ge the tensile strain increases to 1.8%. Transmission electron microscopy studies confirm the absence of a regular grid of misfit dislocations in such structures. This clear experimental evidence for the compliance of Si nano-islands on SOI substrates opens a new integration concept that is not only limited to Ge but also extendable to semiconductors like III–V and II–VI materials.
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spelling pubmed-37690562013-09-17 X-ray characterization of Ge dots epitaxially grown on nanostructured Si islands on silicon-on-insulator substrates Zaumseil, Peter Kozlowski, Grzegorz Yamamoto, Yuji Schubert, Markus Andreas Schroeder, Thomas J Appl Crystallogr X-Ray Diffraction and Imaging On the way to integrate lattice mismatched semiconductors on Si(001), the Ge/Si heterosystem was used as a case study for the concept of compliant substrate effects that offer the vision to be able to integrate defect-free alternative semiconductor structures on Si. Ge nanoclusters were selectively grown by chemical vapour deposition on Si nano-islands on silicon-on-insulator (SOI) substrates. The strain states of Ge clusters and Si islands were measured by grazing-incidence diffraction using a laboratory-based X-ray diffraction technique. A tensile strain of up to 0.5% was detected in the Si islands after direct Ge deposition. Using a thin (∼10 nm) SiGe buffer layer between Si and Ge the tensile strain increases to 1.8%. Transmission electron microscopy studies confirm the absence of a regular grid of misfit dislocations in such structures. This clear experimental evidence for the compliance of Si nano-islands on SOI substrates opens a new integration concept that is not only limited to Ge but also extendable to semiconductors like III–V and II–VI materials. International Union of Crystallography 2013-08-01 2013-06-07 /pmc/articles/PMC3769056/ /pubmed/24046490 http://dx.doi.org/10.1107/S0021889813003518 Text en © Peter Zaumseil et al. 2013 http://creativecommons.org/licenses/by/2.0/uk/ This is an open-access article distributed under the terms of the Creative Commons Attribution Licence, which permits unrestricted use, distribution, and reproduction in any medium, provided the original authors and source are cited.
spellingShingle X-Ray Diffraction and Imaging
Zaumseil, Peter
Kozlowski, Grzegorz
Yamamoto, Yuji
Schubert, Markus Andreas
Schroeder, Thomas
X-ray characterization of Ge dots epitaxially grown on nanostructured Si islands on silicon-on-insulator substrates
title X-ray characterization of Ge dots epitaxially grown on nanostructured Si islands on silicon-on-insulator substrates
title_full X-ray characterization of Ge dots epitaxially grown on nanostructured Si islands on silicon-on-insulator substrates
title_fullStr X-ray characterization of Ge dots epitaxially grown on nanostructured Si islands on silicon-on-insulator substrates
title_full_unstemmed X-ray characterization of Ge dots epitaxially grown on nanostructured Si islands on silicon-on-insulator substrates
title_short X-ray characterization of Ge dots epitaxially grown on nanostructured Si islands on silicon-on-insulator substrates
title_sort x-ray characterization of ge dots epitaxially grown on nanostructured si islands on silicon-on-insulator substrates
topic X-Ray Diffraction and Imaging
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3769056/
https://www.ncbi.nlm.nih.gov/pubmed/24046490
http://dx.doi.org/10.1107/S0021889813003518
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