Cargando…
X-ray characterization of Ge dots epitaxially grown on nanostructured Si islands on silicon-on-insulator substrates
On the way to integrate lattice mismatched semiconductors on Si(001), the Ge/Si heterosystem was used as a case study for the concept of compliant substrate effects that offer the vision to be able to integrate defect-free alternative semiconductor structures on Si. Ge nanoclusters were selectively...
Autores principales: | , , , , |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
International Union of Crystallography
2013
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3769056/ https://www.ncbi.nlm.nih.gov/pubmed/24046490 http://dx.doi.org/10.1107/S0021889813003518 |
_version_ | 1782283931277590528 |
---|---|
author | Zaumseil, Peter Kozlowski, Grzegorz Yamamoto, Yuji Schubert, Markus Andreas Schroeder, Thomas |
author_facet | Zaumseil, Peter Kozlowski, Grzegorz Yamamoto, Yuji Schubert, Markus Andreas Schroeder, Thomas |
author_sort | Zaumseil, Peter |
collection | PubMed |
description | On the way to integrate lattice mismatched semiconductors on Si(001), the Ge/Si heterosystem was used as a case study for the concept of compliant substrate effects that offer the vision to be able to integrate defect-free alternative semiconductor structures on Si. Ge nanoclusters were selectively grown by chemical vapour deposition on Si nano-islands on silicon-on-insulator (SOI) substrates. The strain states of Ge clusters and Si islands were measured by grazing-incidence diffraction using a laboratory-based X-ray diffraction technique. A tensile strain of up to 0.5% was detected in the Si islands after direct Ge deposition. Using a thin (∼10 nm) SiGe buffer layer between Si and Ge the tensile strain increases to 1.8%. Transmission electron microscopy studies confirm the absence of a regular grid of misfit dislocations in such structures. This clear experimental evidence for the compliance of Si nano-islands on SOI substrates opens a new integration concept that is not only limited to Ge but also extendable to semiconductors like III–V and II–VI materials. |
format | Online Article Text |
id | pubmed-3769056 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2013 |
publisher | International Union of Crystallography |
record_format | MEDLINE/PubMed |
spelling | pubmed-37690562013-09-17 X-ray characterization of Ge dots epitaxially grown on nanostructured Si islands on silicon-on-insulator substrates Zaumseil, Peter Kozlowski, Grzegorz Yamamoto, Yuji Schubert, Markus Andreas Schroeder, Thomas J Appl Crystallogr X-Ray Diffraction and Imaging On the way to integrate lattice mismatched semiconductors on Si(001), the Ge/Si heterosystem was used as a case study for the concept of compliant substrate effects that offer the vision to be able to integrate defect-free alternative semiconductor structures on Si. Ge nanoclusters were selectively grown by chemical vapour deposition on Si nano-islands on silicon-on-insulator (SOI) substrates. The strain states of Ge clusters and Si islands were measured by grazing-incidence diffraction using a laboratory-based X-ray diffraction technique. A tensile strain of up to 0.5% was detected in the Si islands after direct Ge deposition. Using a thin (∼10 nm) SiGe buffer layer between Si and Ge the tensile strain increases to 1.8%. Transmission electron microscopy studies confirm the absence of a regular grid of misfit dislocations in such structures. This clear experimental evidence for the compliance of Si nano-islands on SOI substrates opens a new integration concept that is not only limited to Ge but also extendable to semiconductors like III–V and II–VI materials. International Union of Crystallography 2013-08-01 2013-06-07 /pmc/articles/PMC3769056/ /pubmed/24046490 http://dx.doi.org/10.1107/S0021889813003518 Text en © Peter Zaumseil et al. 2013 http://creativecommons.org/licenses/by/2.0/uk/ This is an open-access article distributed under the terms of the Creative Commons Attribution Licence, which permits unrestricted use, distribution, and reproduction in any medium, provided the original authors and source are cited. |
spellingShingle | X-Ray Diffraction and Imaging Zaumseil, Peter Kozlowski, Grzegorz Yamamoto, Yuji Schubert, Markus Andreas Schroeder, Thomas X-ray characterization of Ge dots epitaxially grown on nanostructured Si islands on silicon-on-insulator substrates |
title | X-ray characterization of Ge dots epitaxially grown on nanostructured Si islands on silicon-on-insulator substrates |
title_full | X-ray characterization of Ge dots epitaxially grown on nanostructured Si islands on silicon-on-insulator substrates |
title_fullStr | X-ray characterization of Ge dots epitaxially grown on nanostructured Si islands on silicon-on-insulator substrates |
title_full_unstemmed | X-ray characterization of Ge dots epitaxially grown on nanostructured Si islands on silicon-on-insulator substrates |
title_short | X-ray characterization of Ge dots epitaxially grown on nanostructured Si islands on silicon-on-insulator substrates |
title_sort | x-ray characterization of ge dots epitaxially grown on nanostructured si islands on silicon-on-insulator substrates |
topic | X-Ray Diffraction and Imaging |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3769056/ https://www.ncbi.nlm.nih.gov/pubmed/24046490 http://dx.doi.org/10.1107/S0021889813003518 |
work_keys_str_mv | AT zaumseilpeter xraycharacterizationofgedotsepitaxiallygrownonnanostructuredsiislandsonsilicononinsulatorsubstrates AT kozlowskigrzegorz xraycharacterizationofgedotsepitaxiallygrownonnanostructuredsiislandsonsilicononinsulatorsubstrates AT yamamotoyuji xraycharacterizationofgedotsepitaxiallygrownonnanostructuredsiislandsonsilicononinsulatorsubstrates AT schubertmarkusandreas xraycharacterizationofgedotsepitaxiallygrownonnanostructuredsiislandsonsilicononinsulatorsubstrates AT schroederthomas xraycharacterizationofgedotsepitaxiallygrownonnanostructuredsiislandsonsilicononinsulatorsubstrates |