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X-ray characterization of Ge dots epitaxially grown on nanostructured Si islands on silicon-on-insulator substrates
On the way to integrate lattice mismatched semiconductors on Si(001), the Ge/Si heterosystem was used as a case study for the concept of compliant substrate effects that offer the vision to be able to integrate defect-free alternative semiconductor structures on Si. Ge nanoclusters were selectively...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
International Union of Crystallography
2013
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3769056/ https://www.ncbi.nlm.nih.gov/pubmed/24046490 http://dx.doi.org/10.1107/S0021889813003518 |