Alloy formation during molecular beam epitaxy growth of Si-doped InAs nanowires on GaAs[111]B

Vertically aligned InAs nanowires (NWs) doped with Si were grown self-assisted by molecular beam epitaxy on GaAs[111]B substrates covered with a thin SiO(x) layer. Using out-of-plane X-ray diffraction, the influence of Si supply on the growth process and nanostructure formation was studied. It was f...

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Detalles Bibliográficos
Autores principales: Davydok, Anton, Rieger, Torsten, Biermanns, Andreas, Saqib, Muhammad, Grap, Thomas, Lepsa, Mihail Ion, Pietsch, Ullrich
Formato: Online Artículo Texto
Lenguaje:English
Publicado: International Union of Crystallography 2013
Materias:
X-Ray Diffraction and Imaging
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3769066/
https://www.ncbi.nlm.nih.gov/pubmed/24046494
http://dx.doi.org/10.1107/S0021889813010522

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3769066/
https://www.ncbi.nlm.nih.gov/pubmed/24046494
http://dx.doi.org/10.1107/S0021889813010522

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