Cargando…
Alloy formation during molecular beam epitaxy growth of Si-doped InAs nanowires on GaAs[111]B
Vertically aligned InAs nanowires (NWs) doped with Si were grown self-assisted by molecular beam epitaxy on GaAs[111]B substrates covered with a thin SiO(x) layer. Using out-of-plane X-ray diffraction, the influence of Si supply on the growth process and nanostructure formation was studied. It was f...
| Autores principales: | , , , , , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
International Union of Crystallography
2013
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3769066/ https://www.ncbi.nlm.nih.gov/pubmed/24046494 http://dx.doi.org/10.1107/S0021889813010522 |