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Three-wave X-ray diffraction in distorted epitaxial structures
Three-wave diffraction has been measured for a set of GaN, AlN, AlGaN and ZnO epitaxial layers grown on c-sapphire. A Renninger scan for the primary forbidden 0001 reflection was used. For each of the three-wave combinations, θ-scan curves were measured. The intensity and angular width of both ϕ- an...
Autores principales: | , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
International Union of Crystallography
2013
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3769069/ https://www.ncbi.nlm.nih.gov/pubmed/24046489 http://dx.doi.org/10.1107/S0021889813011709 |
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author | Kyutt, Reginald Scheglov, Mikhail |
author_facet | Kyutt, Reginald Scheglov, Mikhail |
author_sort | Kyutt, Reginald |
collection | PubMed |
description | Three-wave diffraction has been measured for a set of GaN, AlN, AlGaN and ZnO epitaxial layers grown on c-sapphire. A Renninger scan for the primary forbidden 0001 reflection was used. For each of the three-wave combinations, θ-scan curves were measured. The intensity and angular width of both ϕ- and θ-scan three-wave peaks were analyzed. The experimental data were used to determine properties of the multiple diffraction pattern in highly distorted layers. It is shown that the FWHM of θ scans is highly sensitive to the structural perfection and strongly depends on the type of three-wave combination. The narrowest peaks are observed for multiple combinations with the largest l index of the secondary hkl reflection. An influence of the type of the dislocation structure on the θ-scan broadening was revealed. These experimental facts are interpreted by considering the scanning geometry in the reciprocal space and taking into account the disc-shaped reciprocal-lattice points. The total integrated intensities of all the three-wave combinations were determined and their ratios were found to be in only a qualitative agreement with the theory. For AlGaN layers, the presence of the nonzero 0001 reflection was revealed, in contrast to AlN and GaN films. |
format | Online Article Text |
id | pubmed-3769069 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2013 |
publisher | International Union of Crystallography |
record_format | MEDLINE/PubMed |
spelling | pubmed-37690692013-09-17 Three-wave X-ray diffraction in distorted epitaxial structures Kyutt, Reginald Scheglov, Mikhail J Appl Crystallogr X-Ray Diffraction and Imaging Three-wave diffraction has been measured for a set of GaN, AlN, AlGaN and ZnO epitaxial layers grown on c-sapphire. A Renninger scan for the primary forbidden 0001 reflection was used. For each of the three-wave combinations, θ-scan curves were measured. The intensity and angular width of both ϕ- and θ-scan three-wave peaks were analyzed. The experimental data were used to determine properties of the multiple diffraction pattern in highly distorted layers. It is shown that the FWHM of θ scans is highly sensitive to the structural perfection and strongly depends on the type of three-wave combination. The narrowest peaks are observed for multiple combinations with the largest l index of the secondary hkl reflection. An influence of the type of the dislocation structure on the θ-scan broadening was revealed. These experimental facts are interpreted by considering the scanning geometry in the reciprocal space and taking into account the disc-shaped reciprocal-lattice points. The total integrated intensities of all the three-wave combinations were determined and their ratios were found to be in only a qualitative agreement with the theory. For AlGaN layers, the presence of the nonzero 0001 reflection was revealed, in contrast to AlN and GaN films. International Union of Crystallography 2013-08-01 2013-06-07 /pmc/articles/PMC3769069/ /pubmed/24046489 http://dx.doi.org/10.1107/S0021889813011709 Text en © Kyutt and Scheglov 2013 http://creativecommons.org/licenses/by/2.0/uk/ This is an open-access article distributed under the terms of the Creative Commons Attribution Licence, which permits unrestricted use, distribution, and reproduction in any medium, provided the original authors and source are cited. |
spellingShingle | X-Ray Diffraction and Imaging Kyutt, Reginald Scheglov, Mikhail Three-wave X-ray diffraction in distorted epitaxial structures |
title | Three-wave X-ray diffraction in distorted epitaxial structures |
title_full | Three-wave X-ray diffraction in distorted epitaxial structures |
title_fullStr | Three-wave X-ray diffraction in distorted epitaxial structures |
title_full_unstemmed | Three-wave X-ray diffraction in distorted epitaxial structures |
title_short | Three-wave X-ray diffraction in distorted epitaxial structures |
title_sort | three-wave x-ray diffraction in distorted epitaxial structures |
topic | X-Ray Diffraction and Imaging |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3769069/ https://www.ncbi.nlm.nih.gov/pubmed/24046489 http://dx.doi.org/10.1107/S0021889813011709 |
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