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Three-wave X-ray diffraction in distorted epitaxial structures

Three-wave diffraction has been measured for a set of GaN, AlN, AlGaN and ZnO epitaxial layers grown on c-sapphire. A Renninger scan for the primary forbidden 0001 reflection was used. For each of the three-wave combinations, θ-scan curves were measured. The intensity and angular width of both ϕ- an...

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Autores principales: Kyutt, Reginald, Scheglov, Mikhail
Formato: Online Artículo Texto
Lenguaje:English
Publicado: International Union of Crystallography 2013
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3769069/
https://www.ncbi.nlm.nih.gov/pubmed/24046489
http://dx.doi.org/10.1107/S0021889813011709
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author Kyutt, Reginald
Scheglov, Mikhail
author_facet Kyutt, Reginald
Scheglov, Mikhail
author_sort Kyutt, Reginald
collection PubMed
description Three-wave diffraction has been measured for a set of GaN, AlN, AlGaN and ZnO epitaxial layers grown on c-sapphire. A Renninger scan for the primary forbidden 0001 reflection was used. For each of the three-wave combinations, θ-scan curves were measured. The intensity and angular width of both ϕ- and θ-scan three-wave peaks were analyzed. The experimental data were used to determine properties of the multiple diffraction pattern in highly distorted layers. It is shown that the FWHM of θ scans is highly sensitive to the structural perfection and strongly depends on the type of three-wave combination. The narrowest peaks are observed for multiple combinations with the largest l index of the secondary hkl reflection. An influence of the type of the dislocation structure on the θ-scan broadening was revealed. These experimental facts are interpreted by considering the scanning geometry in the reciprocal space and taking into account the disc-shaped reciprocal-lattice points. The total integrated intensities of all the three-wave combinations were determined and their ratios were found to be in only a qualitative agreement with the theory. For AlGaN layers, the presence of the nonzero 0001 reflection was revealed, in contrast to AlN and GaN films.
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spelling pubmed-37690692013-09-17 Three-wave X-ray diffraction in distorted epitaxial structures Kyutt, Reginald Scheglov, Mikhail J Appl Crystallogr X-Ray Diffraction and Imaging Three-wave diffraction has been measured for a set of GaN, AlN, AlGaN and ZnO epitaxial layers grown on c-sapphire. A Renninger scan for the primary forbidden 0001 reflection was used. For each of the three-wave combinations, θ-scan curves were measured. The intensity and angular width of both ϕ- and θ-scan three-wave peaks were analyzed. The experimental data were used to determine properties of the multiple diffraction pattern in highly distorted layers. It is shown that the FWHM of θ scans is highly sensitive to the structural perfection and strongly depends on the type of three-wave combination. The narrowest peaks are observed for multiple combinations with the largest l index of the secondary hkl reflection. An influence of the type of the dislocation structure on the θ-scan broadening was revealed. These experimental facts are interpreted by considering the scanning geometry in the reciprocal space and taking into account the disc-shaped reciprocal-lattice points. The total integrated intensities of all the three-wave combinations were determined and their ratios were found to be in only a qualitative agreement with the theory. For AlGaN layers, the presence of the nonzero 0001 reflection was revealed, in contrast to AlN and GaN films. International Union of Crystallography 2013-08-01 2013-06-07 /pmc/articles/PMC3769069/ /pubmed/24046489 http://dx.doi.org/10.1107/S0021889813011709 Text en © Kyutt and Scheglov 2013 http://creativecommons.org/licenses/by/2.0/uk/ This is an open-access article distributed under the terms of the Creative Commons Attribution Licence, which permits unrestricted use, distribution, and reproduction in any medium, provided the original authors and source are cited.
spellingShingle X-Ray Diffraction and Imaging
Kyutt, Reginald
Scheglov, Mikhail
Three-wave X-ray diffraction in distorted epitaxial structures
title Three-wave X-ray diffraction in distorted epitaxial structures
title_full Three-wave X-ray diffraction in distorted epitaxial structures
title_fullStr Three-wave X-ray diffraction in distorted epitaxial structures
title_full_unstemmed Three-wave X-ray diffraction in distorted epitaxial structures
title_short Three-wave X-ray diffraction in distorted epitaxial structures
title_sort three-wave x-ray diffraction in distorted epitaxial structures
topic X-Ray Diffraction and Imaging
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3769069/
https://www.ncbi.nlm.nih.gov/pubmed/24046489
http://dx.doi.org/10.1107/S0021889813011709
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