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Three-wave X-ray diffraction in distorted epitaxial structures

Three-wave diffraction has been measured for a set of GaN, AlN, AlGaN and ZnO epitaxial layers grown on c-sapphire. A Renninger scan for the primary forbidden 0001 reflection was used. For each of the three-wave combinations, θ-scan curves were measured. The intensity and angular width of both ϕ- an...

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Detalles Bibliográficos
Autores principales: Kyutt, Reginald, Scheglov, Mikhail
Formato: Online Artículo Texto
Lenguaje:English
Publicado: International Union of Crystallography 2013
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3769069/
https://www.ncbi.nlm.nih.gov/pubmed/24046489
http://dx.doi.org/10.1107/S0021889813011709