Solar-Blind Photodetectors for Harsh Electronics

We demonstrate solar-blind photodetectors (PDs) by employing AlN thin films on Si(100) substrates with excellent temperature tolerance and radiation hardness. Even at a bias higher than 200 V the AlN PDs on Si show a dark current as low as ~ 1 nA. The working temperature is up to 300°C and the radia...

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Detalles Bibliográficos
Autores principales: Tsai, Dung-Sheng, Lien, Wei-Cheng, Lien, Der-Hsien, Chen, Kuan-Ming, Tsai, Meng-Lin, Senesky, Debbie G., Yu, Yueh-Chung, Pisano, Albert P., He, Jr-Hau
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2013
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3769657/
https://www.ncbi.nlm.nih.gov/pubmed/24022208
http://dx.doi.org/10.1038/srep02628
Descripción
Sumario:We demonstrate solar-blind photodetectors (PDs) by employing AlN thin films on Si(100) substrates with excellent temperature tolerance and radiation hardness. Even at a bias higher than 200 V the AlN PDs on Si show a dark current as low as ~ 1 nA. The working temperature is up to 300°C and the radiation tolerance is up to 10(13) cm(−2) of 2-MeV proton fluences for AlN metal-semiconductor-metal (MSM) PDs. Moreover, the AlN PDs show a photoresponse time as fast as ~ 110 ms (the rise time) and ~ 80 ms (the fall time) at 5 V bias. The results demonstrate that AlN MSM PDs hold high potential in next-generation deep ultraviolet PDs for use in harsh environments.

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