Solar-Blind Photodetectors for Harsh Electronics

We demonstrate solar-blind photodetectors (PDs) by employing AlN thin films on Si(100) substrates with excellent temperature tolerance and radiation hardness. Even at a bias higher than 200 V the AlN PDs on Si show a dark current as low as ~ 1 nA. The working temperature is up to 300°C and the radia...

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Autores principales: Tsai, Dung-Sheng, Lien, Wei-Cheng, Lien, Der-Hsien, Chen, Kuan-Ming, Tsai, Meng-Lin, Senesky, Debbie G., Yu, Yueh-Chung, Pisano, Albert P., He, Jr-Hau
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2013
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3769657/
https://www.ncbi.nlm.nih.gov/pubmed/24022208
http://dx.doi.org/10.1038/srep02628
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author Tsai, Dung-Sheng
Lien, Wei-Cheng
Lien, Der-Hsien
Chen, Kuan-Ming
Tsai, Meng-Lin
Senesky, Debbie G.
Yu, Yueh-Chung
Pisano, Albert P.
He, Jr-Hau
author_facet Tsai, Dung-Sheng
Lien, Wei-Cheng
Lien, Der-Hsien
Chen, Kuan-Ming
Tsai, Meng-Lin
Senesky, Debbie G.
Yu, Yueh-Chung
Pisano, Albert P.
He, Jr-Hau
author_sort Tsai, Dung-Sheng
collection PubMed
description We demonstrate solar-blind photodetectors (PDs) by employing AlN thin films on Si(100) substrates with excellent temperature tolerance and radiation hardness. Even at a bias higher than 200 V the AlN PDs on Si show a dark current as low as ~ 1 nA. The working temperature is up to 300°C and the radiation tolerance is up to 10(13) cm(−2) of 2-MeV proton fluences for AlN metal-semiconductor-metal (MSM) PDs. Moreover, the AlN PDs show a photoresponse time as fast as ~ 110 ms (the rise time) and ~ 80 ms (the fall time) at 5 V bias. The results demonstrate that AlN MSM PDs hold high potential in next-generation deep ultraviolet PDs for use in harsh environments.
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spelling pubmed-37696572013-09-11 Solar-Blind Photodetectors for Harsh Electronics Tsai, Dung-Sheng Lien, Wei-Cheng Lien, Der-Hsien Chen, Kuan-Ming Tsai, Meng-Lin Senesky, Debbie G. Yu, Yueh-Chung Pisano, Albert P. He, Jr-Hau Sci Rep Article We demonstrate solar-blind photodetectors (PDs) by employing AlN thin films on Si(100) substrates with excellent temperature tolerance and radiation hardness. Even at a bias higher than 200 V the AlN PDs on Si show a dark current as low as ~ 1 nA. The working temperature is up to 300°C and the radiation tolerance is up to 10(13) cm(−2) of 2-MeV proton fluences for AlN metal-semiconductor-metal (MSM) PDs. Moreover, the AlN PDs show a photoresponse time as fast as ~ 110 ms (the rise time) and ~ 80 ms (the fall time) at 5 V bias. The results demonstrate that AlN MSM PDs hold high potential in next-generation deep ultraviolet PDs for use in harsh environments. Nature Publishing Group 2013-09-11 /pmc/articles/PMC3769657/ /pubmed/24022208 http://dx.doi.org/10.1038/srep02628 Text en Copyright © 2013, Macmillan Publishers Limited. All rights reserved http://creativecommons.org/licenses/by/3.0/ This work is licensed under a Creative Commons Attribution 3.0 Unported License. To view a copy of this license, visit http://creativecommons.org/licenses/by/3.0/
spellingShingle Article
Tsai, Dung-Sheng
Lien, Wei-Cheng
Lien, Der-Hsien
Chen, Kuan-Ming
Tsai, Meng-Lin
Senesky, Debbie G.
Yu, Yueh-Chung
Pisano, Albert P.
He, Jr-Hau
Solar-Blind Photodetectors for Harsh Electronics
title Solar-Blind Photodetectors for Harsh Electronics
title_full Solar-Blind Photodetectors for Harsh Electronics
title_fullStr Solar-Blind Photodetectors for Harsh Electronics
title_full_unstemmed Solar-Blind Photodetectors for Harsh Electronics
title_short Solar-Blind Photodetectors for Harsh Electronics
title_sort solar-blind photodetectors for harsh electronics
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC3769657/
https://www.ncbi.nlm.nih.gov/pubmed/24022208
http://dx.doi.org/10.1038/srep02628
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